Modulations of the plasma uniformity by low frequency sources in a large-area dual frequency inductively coupled plasma based on fluid simulations

Sun, Xiao-Yan; Zhang, Yuru; Li, Xuechun; Wang, You‐Nian

doi:10.1063/1.4921670

Cited by 16 publications

(6 citation statements)

References 27 publications

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“…This modeling platform has been used to simulation the ICP and capacitive coupled plasma (CCP) discharges. [22][23][24][25][26][27][28] The fluid model of the MAPS-ICP employed in this work is similar to that described in Refs. [24]- [26].…”

Section: Description Of the Fluid Modelmentioning

confidence: 99%

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Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Sun

Zhang

et al. 2017

Chinese Phys. B

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Planar radio frequency inductively coupled plasmas (ICP) are employed for low-voltage ion implantation processes, with capacitive pulse biasing of the substrate for modulation of the ion energy. In this work, a two-dimensional (2D) selfconsistent fluid model has been employed to investigate the influence of the pulsed bias power on the nitrogen plasmas for various bias voltages and pulse frequencies. The results indicate that the plasma density as well as the inductive power density increase significantly when the bias voltage varies from 0 V to −4000 V, due to the heating of the capacitive field caused by the bias power. The N + fraction increases rapidly to a maximum at the beginning of the power-on time, and then it decreases and reaches the steady state at the end of the glow period. Moreover, it increases with the bias voltage during the power-on time, whereas the N + 2 fraction exhibits a reverse behavior. When the pulse frequency increases to 25 kHz and 40 kHz, the plasma steady state cannot be obtained, and a rapid decrease of the ion density at the substrate surface at the beginning of the glow period is observed.

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Section: Description Of the Fluid Modelmentioning

confidence: 99%

“…[22][23][24][25][26][27][28] The fluid model of the MAPS-ICP employed in this work is similar to that described in Refs. [24]- [26]. Therefore, only a brief description is included here.…”

Section: Description Of the Fluid Modelmentioning

confidence: 99%

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Sun

Zhang

et al. 2017

Chinese Phys. B

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“…Moreover, a two-dimensional (2D) selfconsistent fluid model suggested that the addition of lowfrequency power could largely improve the plasma uniformity in a dual-frequency inductively coupled plasma (ICP). [10] Besides, some special geometric configurations of plasma source can also improve the plasma uniformity. For example, Overzet et al [11] found that a Faraday shield can improve the plasma azimuthal uniformity, and Brcka et al [12] used an integrated planar multi-coil to improve plasma radial uniformity in an ICP source.…”

Section: Introductionmentioning

confidence: 99%

Time-resolved radial uniformity of pulse-modulated inductively coupled O₂/Ar plasmas*

Liu¹,

Xue²,

Gao³

et al. 2021

Chinese Phys. B

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Time-resolved radial uniformity of pulse-modulated inductively coupled O2/Ar plasma has been investigated by means of a Langmuir probe as well as an optical probe in this paper. The radial uniformity of plasma has been discussed through analyzing the nonuniformity factor β (calculated by the measured n e, lower β means higher plasma radial uniformity). The results show that during the active-glow period, the radial distribution of n e exhibits an almost flat profile at the beginning phase, but it converts into a parabola-like profile during the steady state. The consequent evolution for β is that when the power is turned on, it declines to a minimum at first, and then it increases to a maximum, after that, it decays until it keeps constant. This phenomenon can be explained by the fact that the ionization gradually becomes stronger at the plasma center and meanwhile the rebuilt electric field (plasma potential and ambipolar potential) will confine the electrons at the plasma center as well. Besides, the mean electron energy (〈 ε 〉on) at the pulse beginning decreases with the increasing duty cycle. This will postpone the plasma ignition after the power is turned on. This phenomenon has been verified by the emission intensity of Ar (; = 750.4 nm). During the after-glow period, it is interesting to find that the electrons have a large depletion rate at the plasma center. Consequently, n e forms a hollow distribution in the radial direction at the late stage of after-glow. Therefore, β exhibits a maximum at the same time. This can be attributed to the formation of negative oxygen ion (O−) at the plasma center when the power has been turned off.

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“…Because the distribution of plasma characteristics is vital for controlling the process of semiconductor etching, it is of great interest to elucidate the effect of bias on the plasma distributions. Therefore, in this study, the multi-physics analysis for plasma sources-ICP (MAPS-ICP) solver [17][18][19][20][21] composed of a fluid module and a sheath module [22,23] is employed to investigate the effects of single-frequency and dual-frequency bias on the plasma characteristics at different values of ICP source power. Our results provide a useful insight into the effect of source power, which can be used for optimizing the plasma processing techniques.…”

Section: Introductionmentioning

confidence: 99%

Effect of radio frequency bias on plasma characteristics of inductively coupled argon discharge based on fluid simulations*

et al. 2020

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A fluid model is employed to investigate the effect of radio frequency bias on the behavior of an argon inductively coupled plasma (ICP). In particular, the effects of ICP source power, single-frequency bias power, and dual-frequency bias power on the characteristics of ICP are simulated at a fixed pressure of 30 mTorr (1 Torr = 1.33322 × 102 Pa). When the bias frequency is fixed at 27.12 MHz, the two-dimensional (2D) plasma density profile is significantly affected by the bias power at low ICP source power (e.g., 50 W), whereas it is weakly affected by the bias power at higher ICP source power (e.g., 100 W). When dual-frequency (27.12 MHz/2.26 MHz) bias is applied and the sum of bias powers is fixed at 500 W, a pronounced increase in the maximum argon ion density is observed with the increase of the bias power ratio in the absence of ICP source power. As the ratio of 27.12-MHz/2.26-MHz bias power decreases from 500 W/0 W to 0 W/500 W with the ICP source power fixed at 50 W, the plasma density profiles smoothly shifts from edge-high to center-high, and the effect of bias power on the plasma distribution becomes weaker with the bias power ratio decreasing. Besides, the axial ion flux at the substrate surface is characterized by a maximum at the edge of the substrate. When the ICP source power is higher, the 2D plasma density profiles, as well as the spatiotemporal and radial distributions of ion flux at the substrate surface are characterized by a peak in the reactor center, and the distributions of plasma parameters are negligibly affected by the dual-frequency bias power ratio.

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Modulations of the plasma uniformity by low frequency sources in a large-area dual frequency inductively coupled plasma based on fluid simulations

Cited by 16 publications

References 27 publications

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Time-resolved radial uniformity of pulse-modulated inductively coupled O₂/Ar plasmas*

Effect of radio frequency bias on plasma characteristics of inductively coupled argon discharge based on fluid simulations*

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Modulations of the plasma uniformity by low frequency sources in a large-area dual frequency inductively coupled plasma based on fluid simulations

Cited by 16 publications

References 27 publications

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Time-resolved radial uniformity of pulse-modulated inductively coupled O2/Ar plasmas*

Effect of radio frequency bias on plasma characteristics of inductively coupled argon discharge based on fluid simulations*

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Time-resolved radial uniformity of pulse-modulated inductively coupled O₂/Ar plasmas*