Modulating the growth of chemically deposited ZnO nanowires and the formation of nitrogen- and hydrogen-related defects using pH adjustment

Villafuerte, José; Sarigiannidou, E.; Donatini, Fabrice; Kioseoglou, Joseph; Chaix‐Pluchery, Odette; Pernot, Julien; Consonni, Vincent

doi:10.1039/d1na00785h

Cited by 16 publications

(37 citation statements)

References 91 publications

(276 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In nonintentionally doped ZnO NWs, the low residual Ga/Zn and Al/Zn atomic ratios of 1.3 and 10.6 ppm are detected, corresponding to the contamination of the Zn(NO 3 ) 2 and HMTA chemical precursors with residual impurities. 33 The Ga/Zn atomic ratio in Al-and Ga-doped ZnO NWs linearly increases from 1.3 × 10 −4 to 0.89% as the [Ga(NO 3 ) 3 ]/ [Zn(NO 3 ) 2 ] ratio is increased from 0 to 3%. This reveals that A bright-field TEM image and a typical STEM-EDS spectrum of a single Al-and Ga-codoped ZnO NW grown with [Al(NO 3 ) 3 ]/[Zn(NO 3 ) 2 ] and [Ga(NO 3 ) 3 ]/[Zn(NO 3 ) 2 ] ratios of 1.5% in the chemical bath are presented in Figure 5a,b.…”

Section: Resultsmentioning

confidence: 95%

“…The mass concentration of Zn, Al, and Ga dopants in nitric acid solutions along with the dilution factor used are reported in Table S1 in the Supporting Information. In nonintentionally doped ZnO NWs, the low residual Ga/Zn and Al/Zn atomic ratios of 1.3 and 10.6 ppm are detected, corresponding to the contamination of the Zn(NO 3 ) 2 and HMTA chemical precursors with residual impurities . The Ga/Zn atomic ratio in Al- and Ga-doped ZnO NWs linearly increases from 1.3 × 10 –4 to 0.89% as the [Ga(NO 3 ) 3 ]/[Zn(NO 3 ) 2 ] ratio is increased from 0 to 3%.…”

Section: Resultsmentioning

confidence: 97%

“…They are assigned to the B 1 Low , 2B 1 Low , B 1 High , TA + B 1 High , and B 1 Low + B 1 High silent modes, respectively, which originates from disordered-activated Raman scattering due to the breakdown of the translational symmetry of the crystal lattice . The presence of these AM modes with a low intensity in nonintentionally doped ZnO NWs was discussed in ref and attributed to the incorporation of residual nitrogen from HMTA and NH 3 molecules and/or from residual metallic impurities involving Al and Ga in the chemical precursors as quantified by ICP-MS measurements above. These AM modes also exhibit a lower intensity in Al-doped ZnO NWs, indicating the smaller amount of Al dopants.…”

Section: Resultsmentioning

confidence: 97%

“…The transition from neutral to negatively charged Al(III) and Ga(III) species operates at different pH values of about 6.9 and 8.4, respectively. By employing the widely used conditions involving Zn(NO 3 ) 2 and HMTA as the only chemical precursors, the growth of ZnO NWs by CBD takes place at a pH value of around 6, which has been found to be not favorable for the incorporation of Al and Ga dopants. , In contrast, using tailored specific conditions involving ammonia as a chemical additive, the growth of ZnO NWs proceeds at an increased pH above a value of about 8.5 . This stabilizes Zn(II) species as Zn(NH 3 ) 4 2+ complexes to reduce the homogeneous growth in the bulk solution as well as Al(III) and Ga(III) species in their negatively charged complex form to perform the simultaneous co-doping.…”

Section: Resultsmentioning

confidence: 99%

“…21,22 In contrast, using tailored specific conditions involving ammonia as a chemical additive, the growth of ZnO NWs proceeds at an increased pH above a value of about 8.5. 33 This stabilizes Zn(II) species as Zn(NH 3 ) 4 2+ complexes to reduce the homogeneous growth in the bulk solution as well as Al(III) and Ga(III) species in their negatively charged complex form to perform the simultaneous co-doping. Given that the point of zero charge (PZC) values of the Zn-polar c-and nonpolar mplanes are, respectively, 8.7 ± 0.2 and 10.2 ± 0.2 at room temperature, 34,35 the sidewalls of ZnO NWs are positively charged in the high-pH region.…”

Section: Resultsmentioning

confidence: 99%

See 4 more Smart Citations

Interplay Effects in the Co-Doping of ZnO Nanowires with Al and Ga Using Chemical Bath Deposition

et al. 2023

Self Cite

View full text Add to dashboard Cite

The simultaneous co-doping of ZnO nanowires grown by chemical bath deposition is of high interest for a large number of engineering devices, but the process conditions required and the resulting physicochemical processes are still largely unknown. Herein, we show that the simultaneous co-doping of ZnO nanowires with Al and Ga following the addition of Al(NO3)3 and Ga(NO3)3 in the chemical bath operates in a narrow range of conditions in the high-pH region, where the adsorption processes of respective Al(OH)4 – and Ga(OH4)− complexes on the positively charged m-plane sidewalls are driven by attractive electrostatic forces. The structural morphology and properties of ZnO nanowires are significantly affected by the co-doping and mainly governed by the effect of Al(III) species. The incorporation processes of Al and Ga dopants are characterized by significant interplay effects, and the amount of incorporated Ga dopants into ZnO nanowires is found to be larger than the amount of incorporated Al dopants owing to energetic considerations. The Al and Ga dopants are located in the bulk of ZnO nanowires, but a part of Al and Ga lies on their surfaces, their incorporation processes in the bulk being enhanced by thermal annealing under oxygen atmosphere. Eventually, the Al and Ga dopants directly affect the incorporation of hydrogen-related defects, notably by annihilating the formation of VZn-nH defect complexes. These findings present an efficient strategy to proceed with the co-doping of ZnO nanowires grown by chemical bath deposition, opening perspectives to control their electronic structure properties with a higher precision.

show abstract

Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 3 more Smart Citations

Interplay Effects in the Co-Doping of ZnO Nanowires with Al and Ga Using Chemical Bath Deposition

et al. 2023

Self Cite

View full text Add to dashboard Cite

show abstract

Piezoelectric Glass‐Fiber‐Reinforced Polymer Sensor for Structural Health Monitoring and Stiffness Sensing

Kubota²,

Kurita

et al. 2023

Adv Eng Mater

View full text Add to dashboard Cite

Strengthening and repairing infrastructure with fiber‐reinforced polymers while achieving low‐cost, real‐time monitoring of cracks in engineering structures is highly challenging. Here, a piezoelectric glass‐fiber‐reinforced polymer (piezo‐GFRP) sensor was used to monitor the mechanical behavior of cement beams with cracks under cyclic bending. The output voltage and frequency of the sensor were shown to be effective feedback signals for determining the mechanical behavior. The thin piezo‐GFRP sensor showed sufficient piezoelectric sensitivity to monitor the slight variations in the mechanical behavior of the cement beams during the early stages of cracking. This result indicates that such sensors have the potential for the multi‐functional structural health monitoring of engineering structures.This article is protected by copyright. All rights reserved.

show abstract

Enhancing the Output Voltage of Piezoelectric Nanogenerators Based on ZnO Nanowires Grown by Chemical Bath Deposition Using Compensatory Cu Doping

Manrique,

Consonni,

Boubenia

et al. 2024

Energy Tech

Self Cite

View full text Add to dashboard Cite

The screening effect in ZnO nanowires (NWs) coming from the high density of free electrons has emerged as one of the major issues for their efficient integration into piezoelectric devices. Herein, the compensatory Cu doping of ZnO NWs grown by chemical bath deposition in the high‐pH region using Cu(NO3)2 and ammonia as chemical additives is developed and the effects of a postdeposition thermal annealing under oxygen atmosphere are investigated. It is shown that the Cu dopants are incorporated into ZnO NWs with an atomic [Cu]/[Zn] ratio in the range of 50–65 ppm and undergo a migration process into their bulk after thermal annealing. Importantly, the electrical resistivity of Cu‐doped ZnO NWs is found to increase by a factor of 4 compared to unintentionally n‐doped ZnO NWs. The increase is even more pronounced after different thermal annealing, reaching a factor exceeding 100, which is explained by the redistribution of hydrogen‐ and nitrogen‐related defects along with the thermal activation of Cu dopants. Additionally, it is revealed that a rigid piezoelectric nanogenerator based on a Cu‐doped ZnO NW matrix exhibits the highest output voltage and effective piezoelectric coefficient d33eff thanks to the reduction of the screening effect, opening perspectives in the field of piezoelectric devices.

show abstract

Modulating the growth of chemically deposited ZnO nanowires and the formation of nitrogen- and hydrogen-related defects using pH adjustment

Abstract: ZnO nanowires (NWs) grown by chemical bath deposition (CBD) have received a great interest for nanoscale engineering devices, but their formation in aqueous solution containing many impurities needs to be...

Cited by 16 publications

References 91 publications

Interplay Effects in the Co-Doping of ZnO Nanowires with Al and Ga Using Chemical Bath Deposition

Interplay Effects in the Co-Doping of ZnO Nanowires with Al and Ga Using Chemical Bath Deposition

Piezoelectric Glass‐Fiber‐Reinforced Polymer Sensor for Structural Health Monitoring and Stiffness Sensing

Enhancing the Output Voltage of Piezoelectric Nanogenerators Based on ZnO Nanowires Grown by Chemical Bath Deposition Using Compensatory Cu Doping

Contact Info

Product

Resources

About