2020
DOI: 10.1002/adfm.202005677
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Modulating Surface/Interface Structure of Emerging InGaN Nanowires for Efficient Photoelectrochemical Water Splitting

Abstract: Photoelectrochemical (PEC) water splitting provides a promising approach to convert solar energy into hydrogen. Developing active, stable, and cost-effective semiconductors photoelectrodes is of great significance for achieving high-efficiency and large-scale hydrogen production. InGaN nanowires as an important candidate have gained a great upsurge in solar water splitting due to its tunable gap, high electron mobility, large active area, and excellent chemical stability. To obtain state-of-the-art InGaN nanow… Show more

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Cited by 63 publications
(44 citation statements)
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References 164 publications
(231 reference statements)
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“…This process is known as oxygen evolution reaction (OER). [23,27] Thereafter, a complete current loop is formed and the positive photocurrent can be obtained, which can be monitored by the electrochemical workstation. In contrast, when the device is exposed to Light-II (Figure 1b), only SC-II can absorb photons.…”
Section: Resultsmentioning
confidence: 99%
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“…This process is known as oxygen evolution reaction (OER). [23,27] Thereafter, a complete current loop is formed and the positive photocurrent can be obtained, which can be monitored by the electrochemical workstation. In contrast, when the device is exposed to Light-II (Figure 1b), only SC-II can absorb photons.…”
Section: Resultsmentioning
confidence: 99%
“…When the cell is illuminated, as schematically shown in Figure 1, the photoelectrode absorbs photons to excite electrons (e − ) from its valence band (VB) to the conduction band (CB) and leaves holes (h + ) in the VB. [26,27] In this case, the quasi-Fermi level of electrons (E F, n ) and holes (E F, p ) are used to describe the interfacial thermodynamics. And the corresponding photovoltage (V ph ) of the photoelectrode is defined as the value difference between the quasi-Fermi level of electrons and holes under illumination.…”
Section: Resultsmentioning
confidence: 99%
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“…Hence, we are confident that LDA+U with the optimized Us is an attractive approach offering performance similar to that of HSE06 at a tiny fraction of its cost when computing band gaps and E-fields of InGaN superlattices, e.g., in digital alloys [15]. This performance gain might prove helpful when studying, engineering, and optimizing the electronic properties of InGaN nanostructures for light-emitting diodes [52][53][54], gas sensing [55], electrochemical devices [56], solar energy harvesting, and conversion [57][58][59][60], such as InGaN nanowires, core-shell structures, and quantum dots.…”
Section: Discussionmentioning
confidence: 98%
“…To date, extensive striving have been committed to broaden visible‐light responsive photocatalysts for high‐efficiency H 2 production. [ 1–4 ] Among the various catalysts, such as transition metal nitrides, [ 5–7 ] the 2D ternary chalcogenide ZnIn 2 S 4 is a highly promising n‐type semiconductor for photocatalytic H 2 evolution, [ 8–10 ] thanks to its good visible‐light‐harvesting capability (energy bandgap [ E g ] = 2.34–2.48 eV), photostability, and nontoxicity. [ 11,12 ] Yet the single‐phase ZnIn 2 S 4 catalyst typically suffers from serious deterioration in both photocatalytic activity over H 2 evolution, due to its physical and structural deficiencies.…”
Section: Figurementioning
confidence: 99%