Modulating Electrical Performances of In₂O₃ Nanofiber Channel Thin Film Transistors via Sr Doping

Abstract

Although In2O3 nanofibers (NFs) are considered as one of the fundamental building blocks for future electronics, the further development of these NFs devices is still seriously hindered by the large leakage current, low on/off current ratio (Ion/Ioff), and large negative threshold voltage (VTH) due to the excess carriers existed in the NFs. A simple one‐step electrospinning process is employed here to effectively control the carrier concentration of In2O3 NFs by selectively doping strontium (Sr) element to improve their electrical device performance. The optimal devices (3.6 mol% Sr doping concentration) can yield the high field‐effect mobility (μfe ≈ 3.67 cm2 V−1 s−1), superior Ion/Ioff ratio (≈108), and operation in the energy‐efficient enhancement‐mode. High‐κ Al2O3 thin films can also be employed as the gate dielectric to give the gate voltage greatly reduced by 10× (from 40 to 4 V) and the μfe substantially increased by 4.8× (to 17.2 cm2 V−1 s−1). The electrospun E‐mode Sr‐In2O3 NF field‐effect transistors (NFFETs) can as well be integrated into full swing of inverters with excellent performances, further elucidating the significant advance of this electrospinning technique toward practical applications for future low‐cost, energy‐efficient, large‐scale, and high‐performance electronics.

Sr-Doped Cubic In2O3/Rhombohedral In2O3 Homojunction Nanowires for Highly Sensitive and Selective Breath Ethanol Sensing: Experiment and DFT Simulation Studies

“…In the meantime, Sr-doped and Fe-doped hollow In 2 O 3 microspheres reported by Shen et al showed a response of 9.4 and 5.5–100 ppm formaldehyde . Up to now, many techniques have been put forward to synthesize the one-dimensional In 2 O 3 nanostructures, such as chemical vapor deposition, , template-assisted approach, and electrospinning, etc. There are usually two crystal structures for In 2 O 3 , i.e., body-centered cubic (bcc) (c-, Ia 3, a = 10.118 Å) and rhombohedral (rh - , R 3 j c , a = 5.478 Å and c = 14.51 Å) .…”

Enhanced Electrical Performance and Stability of La‐Doped Indium Oxide‐Based Thin‐Film Transistors and Application Explorations

“…Among circuit components, inverters are widely considered to be the basic component that can be manufactured based on E‐mode devices. [ 24 ] In this work, based on the InLaO‐0.5 TFT, an inverter for logic circuits has been built with an external 3 MΩ resistor, exploring the potential application of the InLaO‐0.5 TFT in logic circuits. The circuit schematic of the resistor‐loaded inverter is shown in Figure a.…”

Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film

“…Transparent metal-oxide (MO) thin films have been extensively explored as fundamental building blocks for the next generation of electronic and optic devices due to their outstanding electrical performance, high optical transparency and environmental stability. [1][2][3][4][5][6] Various deposition techniques have been developed to prepare high-quality MO films. The market is currently dominated by vacuum-based techniques (physical vapor deposition and chemical vapor deposition), [7][8] followed by chemical-solution-deposition (CSD)-based deposition techniques, such as spray, 1 spin or dip coating [9][10][11] and inkjet printing [12][13][14] .…”