Buried
interface modification is promising for preparing high-performance
perovskite solar cells (PSCs) by improving the film quality and adjusting
the interfacial energy level alignment. In this work, multifunctional
ethylenediaminetetraacetic acid diammonium (EAD)-modulated ZnO is
employed as an effective buried interface to regulate the interplay
between SnO2 and CsPbI2Br in carbon-based inorganic
PSCs (C-IPSCs). The burying of EAD into the ZnO interlayer not only
enhances the photoelectric properties of ZnO by passivating oxygen
defects but also adjusts the energy level alignment of the buried
interface. More importantly, the perovskite quality is optimized and
the buried interface defects are passivated due to the formation of
coordination and hydrogen bondings. Benefiting from such a robust
and efficient charge transfer configuration, a maximum power conversion
efficiency of 14.58% is achieved in the optimized device, which represents
the highest performance reported among those of low-temperature CsPbI2Br C-IPSCs. In addition, the unencapsulated device demonstrates
better long-term and thermal stability.