Modulated photoluminescence of shallow levels in arsenic-doped Hg1−xCdxTe (x≈0.3) grown by molecular beam epitaxy

Yue, Fangyu; Chu, Junhao; Wu, Jun; Hu, Zhiyun; Li, Yawei; Yang, Pingxiong

doi:10.1063/1.2903499

Cited by 29 publications

(14 citation statements)

References 26 publications

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“…This energy difference between the band-to-band emission and the eA°emission gives an ionization energy of 14 meV for the Hg vacancies, which is close to what was found in the literature by either PL 11 or temperature-dependent Hall measurements. 12 As shown below, the same ionization energy was found for the eA°emission due to mercury vacancies in the arsenic-doped sample. This transition disappears upon n-annealing because the Hg vacancies have been filled.…”

Section: Indium-doped Samplesupporting

confidence: 66%

Photoluminescence Studies of HgCdTe Epilayers

Robin

Taupin

Derone

et al. 2010

Journal of Elec Materi

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We studied the photoluminescence of Hg 1Àx Cd x Te (x % 0.3) layers grown by molecular-beam epitaxy on CdZnTe. The investigations were carried out on unintentionally doped, In-doped, and As-doped samples, and the effect of different annealing procedures was examined. Excitation-power-dependent and temperature-dependent comparative studies were performed. The transition mechanisms are discussed, and optical signatures for arsenic site transfer are found. The contributions due to As 2 Te 3 , As in an amphoteric site, Hg vacancies, and AsHg complexes were identified, and their ionization energies measured. The results are consistent with results found by other techniques. Thus, it is shown that photoluminescence applied to Hg 1Àx Cd x Te can resolve characteristics corresponding to native and intentional donors/ acceptors, and offers a nondestructive, fast tool for material characterization.

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Section: Indium-doped Samplesupporting

confidence: 66%

Photoluminescence Studies of HgCdTe Epilayers

Robin

Taupin

Derone

et al. 2010

Journal of Elec Materi

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“…We attribute the extra peak to Hg vacancies with binding energy 12 meV at 11 K. This value is in agreement with results from other groups. [40][41][42] The solid line in Fig. 7a is the spectrum from a sample which was first annealed and then dipped into a Ag solution to create Ag doping.…”

Section: Pl Measurementsmentioning

confidence: 99%

HgCdTe Research at FFI: Molecular Beam Epitaxy Growth and Characterization

Haakenaasen

Selvig

Tonheim

et al. 2010

Journal of Elec Materi

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This paper presents results from recent work on molecular beam epitaxy growth of HgCdTe at the Norwegian Defence Research Establishment (FFI), including studies of material properties and fabrication of photodiodes and nanostructures. Systematic studies of defect morphology in HgTe and Hg 1Àx Cd x Te have revealed that there is a minimum in the area covered by defects just below the onset of Te precipitation. The shape and density of microvoids in HgTe can be used to determine the deviation from the optimal growth temperature. This can be further related to the optimal growth temperature of Hg 1Àx Cd x Te with any Cd mole fraction by thermodynamic calculations. A mechanism for the formation of microvoids and needles has been presented. Photoluminescence (PL) has been used to study layers without doping and with Hg vacancy, Ag, and In doping. Planar photodiodes with high dynamic resistance and good quantum efficiency were fabricated by ion-milling vacancy-doped mid-wave and long-wave infrared layers. Quantum wells (QWs) with good crystallinity and high PL light output have been grown. Surface patterning has been found to enhance light emission from HgCdTe thin-film and QW samples by $30%. Single-crystal HgTe and segmented HgTe/Te nanowires have been grown, and the resistivity of the nanowires has been measured by conductive atomic force microscopy (AFM), where the AFM tip has been used as a mobile electrode.

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“…Temperature-and excitation power-dependent modulated PL spectroscopy was used in Shanghai Institute of Technical Physics for the study of optical signatures of mercury vacancies and arsenic in MCT. First, Yue et al [33] studied shallow levels in the MBE-grown material with x = 0.3. Samples grown on GaAs substrates (MCT/GaAs) were studied; of those, two samples, which Yue et al [33] named as M1 (x = 0.300) and M3 (x = 0.308) were doped with arsenic with concentration ~10 17 cm -3 .…”

mentioning

confidence: 99%

“…First, Yue et al [33] studied shallow levels in the MBE-grown material with x = 0.3. Samples grown on GaAs substrates (MCT/GaAs) were studied; of those, two samples, which Yue et al [33] named as M1 (x = 0.300) and M3 (x = 0.308) were doped with arsenic with concentration ~10 17 cm -3 . Sample M1 and undoped sample M2 (x = 0.304) were subjected to AA annealing, while sample M3 was subjected to VF annealing.…”

mentioning

confidence: 99%

Photoluminescence in Mercury Cadmium Telluride – a Historical Retrospective. Part II: 2004–2022

Ruzhevich¹,

Mynbaev²

2022

Rev. Adv. Mater. Technol.

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This review is a second part of the work that presents a historical retrospective of the studies of photoluminescence in mercury cadmium telluride (HgCdTe), one of the most important materials of infrared photo-electronics. The second part of the review considers the results of the studies performed in 2004–2022. These studies were carried out mostly on films grown by molecular beam epitaxy and focused on the investigation of defects, especially those originating in p-type doping with mercury vacancies or arsenic atoms. Compositional uniformity and alloy fluctuations in HgCdTe were also the subjects of the studies.

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Modulated photoluminescence of shallow levels in arsenic-doped Hg1−xCdxTe (x≈0.3) grown by molecular beam epitaxy

Cited by 29 publications

References 26 publications

Photoluminescence Studies of HgCdTe Epilayers

Photoluminescence Studies of HgCdTe Epilayers

HgCdTe Research at FFI: Molecular Beam Epitaxy Growth and Characterization

Photoluminescence in Mercury Cadmium Telluride – a Historical Retrospective. Part II: 2004–2022

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