Modulated in-plane carrier distribution of oxide two-dimensional electron gas systems by light assisted electrostatic gating

Tian, Yingyi; Wang, Shuanhu; Zhang, Hui; Li, Hao; Li, Shuqin; Butt, Mehwish Khalid; Zhao, Yang; Wang, Jianyuan; Kusaka, Jin

doi:10.1088/1361-6463/ab7ca1

Cited by 4 publications

(1 citation statement)

References 34 publications

(39 reference statements)

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“…Apart from the STO, KTaO 3 (KTO) is another interesting candidate among perovskite oxides that has recently shown the possibility of hosting the 2DEG when an appropriate interface of KTO is formed with another oxide. − Interfaces based on KTO have recently attracted considerable attention due to the observation of strong spin–orbit coupling (SOC) that arises from the presence of 5d tantalum atoms. , This makes KTO a prominent candidate for future spin-electronic devices. − Till date, very few interfaces based on KTO have been reported to have 2DEG, namely, interfaces of LaTiO 3 –KTaO 3 (LTO–KTO), a-LAO–KTO, LaVO 3 –KTO (LVO–KTO), and EuO–KTO. − Only a few reports of PC on reduced KTO have been reported so far. − However, tuning of transport properties using light for KTO-based interfaces has not been properly explored to date. − …”

Section: Introductionmentioning

confidence: 99%

Photodynamics Study of KTaO₃-Based Conducting Interfaces

Goyal¹,

Tomar²,

Chakraverty³

2021

ACS Appl. Electron. Mater.

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The conducting interfaces of KTaO 3 (KTO) with other appropriate oxides have recently received tremendous attention. These conducting electrons are not only two-dimensional in nature but also possess strong spin−orbit coupling (SOC). Here, we demonstrate the effect of light illumination on the transport properties of two recently discovered KTO's based on two conducting interfaces: LaVO 3 −KTO (LVO−KTO) and EuO−KTO. Among these two samples, LVO− KTO is a conducting interface between two perovskite oxides. On the other hand, EuO−KTO is the conducting interface between a non-perovskite−perovskite oxide. A considerably large increase in conductivity upon laser light illumination (photoconductivity) as well as persistence of that conductivity even after the light is turned off (persistent photoconductivity (PPC)) are observed in both the samples. The overall photoconductivity switching behavior defined through the response characteristic of both the interfaces upon light illumination appears to be very similar and seems to be governed by KTO. Slightly larger photoconductivity as well as persistent current has been observed for the EuO−KTO interface in comparison to the LVO−KTO interface. The change in resistivity as a function of time under light illumination follows a biexponential behavior for both the interfaces. The relaxation time related to the fast component of this biexponential function is almost independent of wavelengths and the slow component decreases with increasing wavelengths of incident light. From the Laplace transform method, we have estimated the hole trap concentrations arising from the defect states, which are 5.77 × 10 17 cm −2 for the EuO−KTO sample and 1.44 × 10 19 cm −2 for the LVO−KTO sample.

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Section: Introductionmentioning

confidence: 99%

Photodynamics Study of KTaO₃-Based Conducting Interfaces

Goyal¹,

Tomar²,

Chakraverty³

2021

ACS Appl. Electron. Mater.

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Tuning the Electrical State of 2DEG at LaVO₃−KTaO₃ Interface: Effect of Light and Electrostatic Gate

Goyal¹,

Wadehra²,

Chakraverty³

2020

Adv Materials Inter

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Two‐dimensional electron gas (2DEG) formed at the interface of perovskite oxides has drawn considerable interest due to its rich underlying physics and potential in future generation spin‐electronic devices. Electrostatic gating and light illumination are two frequently applied stimuli for such devices. In this work, electrical conductivity tuning of a recently discovered conducting interface of crystalline LaVO3 and KTaO3 (LVO−KTO) is reported through electrostatic gating as well as light illumination. Signature of significant photoconductivity as well as persistent photocurrent is observed. A giant enhancement of resistance is found to occur under light illumination when a negative electrostatic gate bias (VG > −8 V) is applied. These effects offer a possible control on carrier density of the oxide interface, which is otherwise difficult due to their huge intrinsic carrier density. Further, a protocol deploying light and gate bias in an appropriate sequence is demonstrated to use this interface as a possible optical‐switch or memory storage device.

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Circular Photogalvanic Effect in Oxide Two-Dimensional Electron Gases

Wang

Zhang

et al. 2022

Phys. Rev. Lett.

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Modulated in-plane carrier distribution of oxide two-dimensional electron gas systems by light assisted electrostatic gating

Cited by 4 publications

References 34 publications

Photodynamics Study of KTaO₃-Based Conducting Interfaces

Photodynamics Study of KTaO₃-Based Conducting Interfaces

Tuning the Electrical State of 2DEG at LaVO₃−KTaO₃ Interface: Effect of Light and Electrostatic Gate

Circular Photogalvanic Effect in Oxide Two-Dimensional Electron Gases

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Modulated in-plane carrier distribution of oxide two-dimensional electron gas systems by light assisted electrostatic gating

Cited by 4 publications

References 34 publications

Photodynamics Study of KTaO3-Based Conducting Interfaces

Photodynamics Study of KTaO3-Based Conducting Interfaces

Tuning the Electrical State of 2DEG at LaVO3−KTaO3 Interface: Effect of Light and Electrostatic Gate

Circular Photogalvanic Effect in Oxide Two-Dimensional Electron Gases

Contact Info

Product

Resources

About

Photodynamics Study of KTaO₃-Based Conducting Interfaces

Photodynamics Study of KTaO₃-Based Conducting Interfaces

Tuning the Electrical State of 2DEG at LaVO₃−KTaO₃ Interface: Effect of Light and Electrostatic Gate