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Among the perovskite oxide family, KTaO3 (KTO) has recently attracted considerable interest as a possible system for the realization of the Rashba effect. In this work, we improvise a novel conducting interface by juxtaposing KTO with another insulator, namely LaVO3 (LVO) and report planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) measurements. This interface exhibits a signature of strong spin-orbit coupling. Our experimental observation of two fold AMR at low magnetic fields can be intuitively understood using a phenomenological theory for a Rashba spin-split system. At high fields (∼8 T), we see a two fold to four fold transition in the AMR that could not be explained using only Rashba spin-split energy spectra. We speculate that it might be generated through an intricate process arising from the interplay between strong spin-orbit coupling, broken inversion symmetery, relativistic conduction electron and possible uncompensated localized vanadium spins.

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The momentum‐dependent splitting of spin‐bands in an electronic system is known as the “Rashba effect.” Systems with the Rashba effect possess a Dirac point in momentum space, which may act as a source of Berry's phase for the conduction electrons of such system. Herein, the Shubnikov–de Haas oscillations (SdH) at the conducting interface of EuO–KTaO3 (KTO) are reported. The observed SdH oscillations suggest the presence of two Fermi surfaces. For both Fermi surfaces, the presence of a Berry's phase is seen. Strong spin–orbit coupling is also observed in this system. The existence of two Fermi surfaces with Berry's phase along with the signature of strong spin–orbit coupling suggest the formation of Rashba spin‐split bands. As in topological insulators, two‐fold planar Hall effect and anisotropic magnetoresistance are also observed in EuO–KTO. Analyzing the SdH, Hall, and magnetoresistance data, the authors draw a possible band diagram near the Fermi surface.