Modular test system architecture for device, circuit and system level reliability testing

Sleik, Roland; Glavanovics, Michael; Einspieler, Sascha; Muetze, Annette; Krischan, Klaus

doi:10.1109/apec.2016.7467957

Cited by 3 publications

(1 citation statement)

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“…Long term testing of the devices under real application conditions with no fails is a first necessary step, but only application testing with accelerated conditions (e.g. higher temperatures, bus voltages, peak currents) and testing to failure allows extraction of life time models and hence failure rates in real life [145]. As a joint effort by the major semiconductor companies involved in GaN, a working group for the standardization of GaN qualification under the framework of JEDEC has been recently established to address many of the before mentioned aspects [146].…”

Section: Oliver Häberlenmentioning

confidence: 99%

The 2018 GaN power electronics roadmap

Amano¹,

Baines²,

Borga³

et al. 2018

J. Phys. D: Appl. Phys.

943

415

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Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

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Section: Oliver Häberlenmentioning

confidence: 99%