2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) 2015
DOI: 10.1109/icpe.2015.7167879
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Modular power converter integration based on non-conventional power switch assembly and interconnects

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Cited by 6 publications
(5 citation statements)
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“…The idea here is to produce a high reliable plug-in system to reduce downtime and drive down maintenance costs of repairable systems. Waveforms of the collector-emitter voltage measured during early electrical tests have shown extremely clean switching transitions, confirming a very low parasitic inductance of the power loop [6].…”
Section: Half-bridge Switch System Assemblymentioning
confidence: 72%
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“…The idea here is to produce a high reliable plug-in system to reduce downtime and drive down maintenance costs of repairable systems. Waveforms of the collector-emitter voltage measured during early electrical tests have shown extremely clean switching transitions, confirming a very low parasitic inductance of the power loop [6].…”
Section: Half-bridge Switch System Assemblymentioning
confidence: 72%
“…The developed switch model was characterized electromagnetically, employing structural numerical analysis tools in [5,6]. A preliminary Finite element (FE) thermal modelling and simulation for the HBS has been carried out to compare the maximum juncture temperature of the chips at different environmental conditions using Silicon-Nitrate substrate.…”
Section: Half-bridge Switch Model and Simulationmentioning
confidence: 99%
“…1c show an exploded view of the stacked HBS and a picture of it, respectively. More details of the HBS technology can be found in [8,9]. This novel assembly is designed for high frequency plug in connectors, allowing optimization of performance, reliability and availability of the power system by means the following features.…”
Section: The Double Flat Power Switchmentioning
confidence: 99%
“…In a previous work [8,9] the authors developed a highly integrated double power switch, in half bridge configuration, based on 70m thin IGBTs and diodes rated at 600V/200A, on advanced ceramic substrate technology, featuring double-etched patterned copper tracks for a fully bond-wire-less double-sided cooling. Such an assembly could be suitable for applications also with SiC devices, due to its low parasitic inductance, low thermal resistance, and high strength.…”
Section: The Double Flat Power Switchmentioning
confidence: 99%
“…Here, the switch is implemented in an innovative sandwich type assembly, where each IGBT-diode pair is soldered backside down on separate substrates [7]: as compared with previously proposed approaches (see [8], for example), this arrangement offers the possibility to keep the interconnection loops and the corresponding stray inductance between TH-DL and between TL-DH at a minimum, while ensuring that all devices can be efficiently cooled via their preferential heattransfer path, that is the backside. This way, while double sided cooling is still achieved, the thermal performance of the assembly is fully symmetrical.…”
Section: A Modulementioning
confidence: 99%