Modular high-throughput test stand for versatile screening of thin-film materials libraries

Abstract

Versatile high-throughput characterization tools are required for the development of new materials using combinatorial techniques. Here, we describe a modular, high-throughput test stand for the screening of thin-film materials libraries, which can carry out automated electrical, magnetic and magnetoresistance measurements in the temperature range of −40 to 300• C. As a proof of concept, we measured the temperature-dependent resistance of Fe-Pd-Mn ferromagnetic shape-memory alloy materials libraries, revealing reversible martensitic transformations and the associated transformation temperatures. Magneto-optical screening measurements of a materials library identify ferromagnetic samples, whereas resistivity maps support the discovery of new phases. A distance sensor in the same setup allows stress measurements in materials libraries deposited on cantilever arrays. A combination of these methods offers a fast and reliable high-throughput characterization technology for searching for new materials. Using this approach, a composition region has been identified in the Fe-Pd-Mn system that combines ferromagnetism and martensitic transformation.

Properties of anodic oxides grown on a hafnium–tantalum–titanium thin film library

“…A precise measurement of the three concentration gradients allowed an accurate identification of the composition of various Hf–Ta–Ti alloys in the combinatorial library. More details regarding the fabrication and high-throughput characterization of thin film material libraries can be found elsewhere [24, 25]. …”

The Bain library: A Cu-Au buffer template for a continuous variation of lattice parameters in epitaxial films

“…Complete binary or ternary systems can be fabricated in one deposition process and systematically characterized by automated highthroughput methods. 11 As a binary buffer layer system we selected the Cu-Au system that exhibits a fcc disordered solid solution (Au,Cu) over the whole composition range at higher temperatures. 12 The lattice parameters lie between the values of the pure elements.…”

High‐Throughput Investigation of the Oxidation and Phase Constitution of Thin‐Film Ni–Al–Cr Materials Libraries

“…delaminate from the substrate due to stresses induced by the oxidation of the metal change their electrical resistance, due to the transition from a metallic state to a semiconducting or insulating state resistance screening [15] increase in thickness caused by volume increase due to structure change caused by oxidation microstructured substrate and automated thickness measurements [16] change the film structure automated RBS [17] change their crystallinity; e.g., from a crystalline metal to an amorphous or crystalline oxide automated XRD [14] change their oxygen content automated EDX and RBS [17] nominal thickness of the materials libraries was $600 nm. After deposition, the as-deposited multilayer precursor structure was annealed at 500°C for 1 h in vacuum (pressure <1.3 Â 10 À8 Pa) in order to initiate and promote phase formation.…”

“…Automated Rutherford backscattering (RBS) measurements were performed at RUBION. RBS for oxygen detection was done using the resonant scattering of 4 He on 16 O at 3.04 MeV with a scattering angle of 160°. The beam energy was set to 3.1 MeV so that the resonance energy is reached at a bit more than 100 nm inside the film.…”