2012
DOI: 10.1016/j.spmi.2012.04.007
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Modified thermal evaporation process using GeO2 for growing ZnO structures

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Cited by 8 publications
(2 citation statements)
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“…It can be seen that the intensity of the PL decreased with the increasing of temperature which can be explained by considering the formation of oxygen vacancy during the formation of Zn 2 GeO 4 nanowires in the high evaporated temperature process. It was reported that the green light emission should be attributed to the presence of Ge which probably substitutes Zn during the formation of Zn 2 GeO 4 crystals [36,37]. Therefore, 530 nm emission band observed by us and other can be originated from the Ge-associated luminescence centers [35].…”
Section: Luminescence Of Thermal Evaporated Zn:ge Mixture With Varioumentioning
confidence: 64%
“…It can be seen that the intensity of the PL decreased with the increasing of temperature which can be explained by considering the formation of oxygen vacancy during the formation of Zn 2 GeO 4 nanowires in the high evaporated temperature process. It was reported that the green light emission should be attributed to the presence of Ge which probably substitutes Zn during the formation of Zn 2 GeO 4 crystals [36,37]. Therefore, 530 nm emission band observed by us and other can be originated from the Ge-associated luminescence centers [35].…”
Section: Luminescence Of Thermal Evaporated Zn:ge Mixture With Varioumentioning
confidence: 64%
“…O 2– ions can be introduced during GeO 2 decomposition by the following reaction: 2GeO 2 (s) → 2GeO (s) + O 2 (g), and GeO (g) + H 2 (g) → Ge (s) + H 2 O (g). [ 18 ] The O 2– ions from GeO 2 decomposition effectively compensate for the loss of oxygen ions, leading to the decrease of V O (Figures 1d and 2e). Moreover, the GeO 2 decomposition occurring at high temperatures will also lead to the formation of Ge metal (Figure S7a, Supporting Information), suggesting that Ge 4+ ions do not enter CaO host lattice.…”
Section: Resultsmentioning
confidence: 99%