2020
DOI: 10.1039/c9tc06239d
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Modified silicone rubber for fabrication and contacting of flexible suspended membranes of n-/p-GaP nanowires with a single-walled carbon nanotube transparent contact

Abstract: +7 9117294724 1. AbstractThis work proposes new chemical and mechanical materials and techniques for III-V semiconductor NW/silicone membrane formation and optoelectronic device fabrication. Molecular beam epitaxy (MBE)-synthesized n-, p-and i-GaP NWs were encapsulated by introduced G-coating method into synthesized polydimethylsiloxane-graft-polystyrene and released from the Si growth substrate. The fabricated membranes were contacted with different materials including single-walled carbon nanotubes or ferroc… Show more

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Cited by 29 publications
(38 citation statements)
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“…The NW encapsulation and exfoliation technique employing cap-film for mechanical support was described by Neplokh et.al. in [ 52 , 53 ].…”
Section: Methodsmentioning
confidence: 99%
“…The NW encapsulation and exfoliation technique employing cap-film for mechanical support was described by Neplokh et.al. in [ 52 , 53 ].…”
Section: Methodsmentioning
confidence: 99%
“…The ability to synthesize polysiloxanes by polycondensation reactions [13] between cyclic oligosiloxanes and functionalized dichlorosilanes provides a plethora of materials with different chemical structures and mechanical behaviors that can be tuned for different applications. For example, the commonly employed Karstedt's catalyst [17,18] can be used to convert cyclic oligosiloxanes from liquids at room temperature into flexible plastic and gel-like materials that have been used as platforms for optoelectronics [19,20]. With appropriate polar functional groups, polysiloxanes become somewhat hydrophilic, making them useful as adhesives and sealants [11] despite the parent polymers being highly hydrophobic.…”
Section: A Brief History Of Polysiloxanes Including An Overview Of Their Propertiesmentioning
confidence: 99%
“…parts of MWs due to the shadowing effect (Figure 1c). After deposition, metalized MWs were annealed in the ambient atmosphere at 500 °C for 10 min to form an ohmic contact to the p-GaN shell [41].…”
Section: Synthesis Of Ingan/gan Microwire Arraysmentioning
confidence: 99%
“…Metallization of MW topmost parts was carried out at a 78 • deposition angle in relation to the MW axis that allows avoiding undesirable metal deposition on the lower parts of MWs due to the shadowing effect (Figure 1c). After deposition, metalized MWs were annealed in the ambient atmosphere at 500 • C for 10 min to form an ohmic contact to the p-GaN shell [41].…”
Section: Pdms/mw Membrane Fabricationmentioning
confidence: 99%
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