Modified CVD growth and characterization of ZnO thin films

Dutta, Atanu; Basu, S.

doi:10.1016/0254-0584(93)90117-5

Cited by 31 publications

(13 citation statements)

References 8 publications

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“…The details of the deposition and properties of the film were reported earlier [12]. Crystalline zinc ingot was grown by the Stockbarger method and thin wafers were cut to prepare Zn substrates.…”

Section: Methodsmentioning

confidence: 99%

Modified metal-insulator-metal (M-I-M) hydrogen gas sensors based on zinc oxide

Dutta

Basu

1995

J Mater Sci: Mater Electron

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Zinc oxide thin films (thickness ~0.6 pm) were deposited on zinc substrates by the spray-CVD method and a new kind of sensor structure Pd/ZnO/Zn was fabricated for hydrogen detection. The sensor was exposed to air mixed with different concentrations of H2 (2000-20000 ppm) and showed high sensitivity and a short time response at room temperature. The recovery time of the sensor to the zero base level was found to be faster after exposure to. higher hydrogen concentrations. The sensitivity was bias-dependent with best performanCe at 0.05 V. Because of the key role of sensing played by the adsorption and desorption processes at the Pd surface and the Pd/ZnO interface, the contact resistance at the Pd/ZnO interface changed reversibly. The sensor showed high selectivity to hydrogen at room temperature and was insensitive to CO, CO2 and LPG even at higher concentrations.

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Section: Methodsmentioning

confidence: 99%

Modified metal-insulator-metal (M-I-M) hydrogen gas sensors based on zinc oxide

Dutta

Basu

1995

J Mater Sci: Mater Electron

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“…For spray pyrolysis and spray-CVD a boundary layer model composed of three zones was once proposed to interpret the film deposition [28,34]. Similarly, the mist-CVD process in the reactor also follows a boundary layer model.…”

Section: Boundary Layer Modelmentioning

confidence: 99%

“…ZnO thin films have been deposited using various techniques, such as magnetron sputtering [3][4][5][6][7][8][9]12,21], reactive evaporation [22], pulsed laser deposition (PLD) [13][14][15]17,19] (MOCVD) [10,[23][24][25][26][27], molecular beam epitaxy (MBE) [2,18,20], spray pyrolysis [28][29][30][31][32], and sol-gel [33]. In particular, MOCVD is an attractive method to prepare ZnO films for industry, offering the capability of large-area deposition and batch production.…”

Section: Introductionmentioning

confidence: 99%

Zno-based thin films synthesized by atmospheric pressure mist chemical vapor deposition

Lü

Kawaharamura

Nishinaka

et al. 2007

Journal of Crystal Growth

165

101

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“…Numerous fabrication techniques have been implemented in the growth of ZnO thin films on various substrates, including metal-organic chemical vapor deposition, sol-gel deposition, DC or RF magnetron sputtering, reactive evaporation, spray pyrolysis, and pulsed laser deposition, each of which might be expected to exhibit different stoichiometry tendencies as well as background impurities and defects. [47][48][49][50] Recently, we have started to deposit series of ZnO films on various substrates using the RF/DC magnetron sputtering technique and RF-PAMBE. The IBA techniques have been used to determine the composition and impurity in the films in order to optimize the deposition parameters to obtain improved electrical and optical properties of ZnO film.…”

Section: Zno Film Characterizationmentioning

confidence: 99%

Ion Beam Analysis of Amorphous and Nanocrystalline Group III-V Nitride and ZnO Thin Films

Kennedy

Markwitz

Trodahl

et al. 2007

Journal of Elec Materi

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The ion beam analysis (IBA) techniques of Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), nuclear reaction analysis (NRA), and particle-induced x-ray emission (PIXE) have been used to quantitatively determine composition, uniformity, impurity, and elemental depth profiles of major, minor, and trace elements of group III-V nitride and zinc oxide (ZnO) thin films prepared by various growth techniques. The IBA revealed that an amorphous GaN film prepared by ion beam assisted deposition (IBAD) has large variations in film thickness and composition coupled with typically 10-20% oxygen that was found to be essential to stabilize their amorphous structure. The IBA characterization of plasma-assisted molecular beam epitaxy (PAMBE) grown GaN, InN, and InCrN films revealed composition, impurity, and uniformity information of the films. The IBA of ZnO films prepared by radio frequency (RF) sputtering showed that the Zn/O ratio often varied significantly over the film thickness. Hydrogen was found to be a major impurity in the films with around one present in the as-deposited ZnO films. It is clearly shown that the nondestructive, quantitative, and rapid IBA measurements are very useful to develop and optimize growth protocols in respect to film thickness, stoichiometry, and especially in regard to hydrogen and oxygen impurities for group III-V nitride and ZnO thin films prepared by various growth techniques.

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Modified CVD growth and characterization of ZnO thin films

Cited by 31 publications

References 8 publications

Modified metal-insulator-metal (M-I-M) hydrogen gas sensors based on zinc oxide

Modified metal-insulator-metal (M-I-M) hydrogen gas sensors based on zinc oxide

Zno-based thin films synthesized by atmospheric pressure mist chemical vapor deposition

Ion Beam Analysis of Amorphous and Nanocrystalline Group III-V Nitride and ZnO Thin Films

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