Modified Becke–Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4

Advances in Quaternary and Pentanary Semiconductors for Communication and Networking Applications

“…Li 2 CdGeS 4 and Li 2 CdSnS 4 compounds are diamond-like semiconductors (DLSs) and have been investigated to explore their electronic structure and optical properties for potential optoelectronic applications. It is shown that the band structures exhibit direct band gap semiconductors with optical band gaps of 2.461eV and 3.16eV for Li 2 CdGeS 4 and Li 2 CdSnS 4 respectively [5]. Both compounds are optically active materials.…”

Machine learning and density functional theory simulation of the electronic structural properties for novel quaternary semiconductors

“…[15][16][17] Novel optoelectronic semiconductors, such as CuInS 2 , Cu 2 ZnSnS 4 , and other ternary and quaternary semiconductors based on tetrahedral a zinc blende structure have higher degrees of freedom in terms of their composition, facilitating a more subjective selection of environmentally friendly elements and materials performance requirements. 18,19 Furthermore, due to the weak dependence between the advanced optoelectronic properties of novel optoelectronic semiconductors and specific elements, quaternary compounds are obviously dominant in terms of the number of species. Hence, it is necessary to accelerate the development of new quaternary semiconductors for optoelectronic fields.…”