2013
DOI: 10.1134/s1063774513070122
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Modification of the crystal structure of gadolinium gallium garnet by helium ion irradiation

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Cited by 8 publications
(4 citation statements)
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“…Of course, when crystal distortions due to defects are sufficiently strong to cause observable diffuse scattering intensities, the measurement of reciprocal space maps by using the high‐resolution triple‐crystal X‐ray diffractometer is of exceptional importance for the assessment of more details on defect structures in ion‐implanted layers . However, in general, to understand the mechanisms of growth defects appearance and damage formation in materials irradiated with energetic ions the various additional analytical techniques are necessary, such as transmission electron microscopy, ion and electron Rutherford backscattering spectrometry, Raman spectroscopy, X‐ray photoelectron spectroscopy, small‐angle X‐ray scattering, positron annihilation spectroscopy etc.…”
Section: Discussionmentioning
confidence: 99%
“…Of course, when crystal distortions due to defects are sufficiently strong to cause observable diffuse scattering intensities, the measurement of reciprocal space maps by using the high‐resolution triple‐crystal X‐ray diffractometer is of exceptional importance for the assessment of more details on defect structures in ion‐implanted layers . However, in general, to understand the mechanisms of growth defects appearance and damage formation in materials irradiated with energetic ions the various additional analytical techniques are necessary, such as transmission electron microscopy, ion and electron Rutherford backscattering spectrometry, Raman spectroscopy, X‐ray photoelectron spectroscopy, small‐angle X‐ray scattering, positron annihilation spectroscopy etc.…”
Section: Discussionmentioning
confidence: 99%
“…The distribution of defects in the ion-implanted layer is given in the form of stairs that describe two types of parameters: the concentration of defects and their radii. Minimization of the function of MSD was carried out by changing the concentration and radii of defects according to the second approach [20].…”
Section: Algorithm For Determining the Parameters Of The Structurementioning
confidence: 99%
“…Analysis of deformations that occur in the surface layers of the materials held by us in [6,7], but taking into account the orientation of defects at X-ray analysis it was not implemented. In order to obtain the approximating functional dependence of the extinction coefficient on radius R and concentration c of dislocation loops and on the angular deviation of the incident beam from the exact Bragg position (∆ ), analytical expressions obtained in [8] were used.…”
Section: Calculation Of сOefficients In Approximation Formulasmentioning
confidence: 99%