Modification of porous SiOCH by first contact with water vapor after plasma process

Darnon, Maxime; Rochat, N.; Licitra, C.

doi:10.1116/1.4932533

Cited by 6 publications

(3 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Another serious problem during the PECVD plasma deposition process is plasma‐induced material damage. [ 16 ] Highly energetic plasma particles such as ions, electrons and photons bombarding continuously the surface of growing film which may cleavage Si‐C or Si‐O bonds and form Si‐H or Si‐OH moieties at broken bonds. The presence of Si‐H residues in SiOC films provides a leakage path for electrons and can produce films with poor electrical properties.…”

Section: Introductionmentioning

confidence: 99%

Atomic Hydrogen Induced Chemical Vapor Deposition of Silicon Oxycarbide Thin Films Derived from Diethoxymethylsilane Precursor

Uznański

Walkiewicz-Pietrzykowska

Jankowski

et al. 2020

Applied Organom Chemis

View full text Add to dashboard Cite

Amorphous silicon oxycarbide (a-SiOC:H) films produced by remote plasma RPCVD from diethoxymethylsilane (DEMS) were characterized in terms of their basic properties related to the coatings deposited using conventional plasma enhanced PECVD method. The effect of substrate temperature (T S) on the growth rate, chemical composition, structure, and properties of resulting a-SiOC:H films is reported. Film growth is an adsorption-controlled process, wherein two mechanisms can be distinguished with a transition at about T S =70 C. Depending on the temperature, films of different nature can be obtained, from polymer-like to highly crosslinked material with C-Si-O network. The chemical structure of a-SiOC:H films was characterized by FTIR, 13 C and 29 Si solid-state NMR, and X-ray photoelectron spectroscopes. The a-SiOC:H films were also characterized in terms of their density, refractive index, surface morphology, conformality of coverage, hardness, adhesion to a substrate, and friction coefficient. The films were found to be morphologically homogeneous materials exhibiting good conformality of coverage and small surface roughness. Their refractive index exhibits anomalous effect revealing a minimum value at T S =125 C. Due to their exceptional physical properties a-SiOC:H films produced by RPCVD from DEMS precursor seems to be useful as potential dielectric materials or coatings for various encapsulation applications. K E Y W O R D S a-SiOC:H films, remote hydrogen plasma CVD, diethoxymethylsilane, mechanical properties, optical properties 1 | INTRODUCTION Nowadays, silicon oxycarbide materials (SiOC), also referred to as hybrid organosilicate glasses (OSG), processed from small organosilane precursors have attracted researchers' attention due to their many interesting properties, such as: thermal stability, dielectric constant of adjustable value from 2.4 to 3.9, very low absorption coefficient, wide band gap, tuneable refractive index, high hardness and elastic modulus, low residual stress and resistance to oxidation. [1-5] The main potential applications of silicon oxycarbide materials include light

show abstract

Section: Introductionmentioning

confidence: 99%

Atomic Hydrogen Induced Chemical Vapor Deposition of Silicon Oxycarbide Thin Films Derived from Diethoxymethylsilane Precursor

Uznański

Walkiewicz-Pietrzykowska

Jankowski

et al. 2020

Applied Organom Chemis

View full text Add to dashboard Cite

show abstract

“…The spectrum corresponding to the as-patterned sample exhibits the typical bonds and functional groups of a blanket silica-based low-k film. [9][10][11][12] The main absorption bands include the Si-O and Si-C bonds between ∼745-880 cm −1 , the asymmetric stretching band of Si-O-Si with a shoulder at the higher wavenumber side between 980-1250 cm −1 , the Si-CH 3 bond at 1275 cm −1 , and C-H bond at 2980 cm −1 . With the exception for the sample treated/cleaned with the formulated chemical, where the TiN hard mask was removed during the treatment (SEM shown in the next section), one notices that the baseline for all the other spectra drops off as the wavenumber increases.…”

Section: Resultsmentioning

confidence: 99%

“…3,4,8 Fourier transform infrared spectroscopy (FTIR) represents a method of choice for the characterization of blanket porous dielectrics. [9][10][11][12][13][14][15] The first objective of the study reported herein is to investigate the effect of moisture and aging on the evolution of the post-etch residues on a patterned, single damascene TiN HM/porous low-k dielectric structure for the case of without and with a reducing post-etch treatment. We will show that the presence -or not -of a layer of CFx-type residues at the surface significantly affects the degree of growth of the other type of residues, i.e.…”

mentioning

confidence: 99%

Formation and Wet Removal of Organic and Titanium-Containing Residues on Patterned TiN/Porous Low-k Structure

Kesters

Holsteyns

2018

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The formation of the residues after patterning of a patterned metal hard mask/dielectric stack was characterized using surface-sensitive methods (attenuated total reflection-Fourier transform infrared spectroscopy and angle-resolved X-ray photoelectron spectroscopy) and scanning electron microscopy. The effect of a reducing plasma post-etch treatment (PET), aging, and moisture on the evolution of the residues was investigated. Both polymer-based (CFx) and metal-containing (TiFx) residues were identified on the exposed surface of the stack. Without the PET, the XPS data collected at different take-off angles suggested that the metal-containing residues were covered by a thin layer of polymer-based residues. The metal-containing residues were found to continue to evolve as a function of aging time if the layer of polymer-based residues was removed by the PET, making the metal hard mask in direct contact with cleanroom air. Exposing the MHM/dielectric stack to a 100% humidity environment did not induce further growing of the TiFx residues. Despite the PET only had limited removal of the TiFx-based residues, it was efficient in removing the polymer-based CFx residues, which in turn led to a better cleaning efficiency after the subsequent wet clean. The results in this study also confirmed that diluted HF dissolved TiFx-type residues and had no CFx removal capability. Although only two chemicals are shown as examples for post-etch residue removal, the type of test structure and methodology shown in this study can be applied for investigation and optimization of any other chemical mixture candidates for cleaning purpose.

show abstract

Effect of accelerated hydrothermal aging on the durability of Si-based dielectric thin films

Rubeck

Cartailler

Coutellier

et al. 2022

Microelectronic Engineering

View full text Add to dashboard Cite

Modification of porous SiOCH by first contact with water vapor after plasma process

Cited by 6 publications

References 16 publications

Atomic Hydrogen Induced Chemical Vapor Deposition of Silicon Oxycarbide Thin Films Derived from Diethoxymethylsilane Precursor

Atomic Hydrogen Induced Chemical Vapor Deposition of Silicon Oxycarbide Thin Films Derived from Diethoxymethylsilane Precursor

Formation and Wet Removal of Organic and Titanium-Containing Residues on Patterned TiN/Porous Low-k Structure

Effect of accelerated hydrothermal aging on the durability of Si-based dielectric thin films

Contact Info

Product

Resources

About