Models of grain boundaries in the diamond lattice I. Tilt about I 10

Hornstra, J.

doi:10.1016/s0031-8914(59)94454-4

Cited by 165 publications

(40 citation statements)

References 15 publications

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“…they contain both edge and screw components. Hornstra (1959) has explained that {111 } twin boundaries in diamond may be described as twist boundaries with a network of screw dislocations. Sunagawa (1969) has attributed the spiral elevations on pyrite to twist boundaries present in the crystal.…”

Section: Discussionmentioning

confidence: 99%

The natural etching of sub-boundary dislocations on {100} diamond surfaces

Patel¹,

Patel²

1975

J Appl Cryst

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Section: Discussionmentioning

confidence: 99%

The natural etching of sub-boundary dislocations on {100} diamond surfaces

Patel¹,

Patel²

1975

J Appl Cryst

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“…In Fig. 49 both types of bonding models can be seen 212 ). Both authors did not sufficiently point out the "three-dimensional" character of the interfaces studied including the various bond distortions.…”

Section: Structural Aspectsmentioning

confidence: 92%

“…Hornstra 212 ) and Kohn213) have investigated independently the structure of such interfaces from a predominantly theoretical viewpoint. Whereas Kohn did not allow broken bonds, these were included in Hornstra's work.…”

Section: Structural Aspectsmentioning

confidence: 99%

“Solar” Silicon

Dietl¹,

Helmreich²,

Sirtl³

1981

Crystals

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“…However, in this case the C unit is inserted in between the seven and the five atom ring of one M basic unit. As a matter of fact the structure of the original E=9 GB can also be read as a stacking of "L" SUs [16] as described in [17]. The presence of -6c can be translated by the sequence L-L+CL-L+ L-.…”

Section: M+mentioning

confidence: 99%

Plasticity of a silicon bicrystal: a HREM study

Thibault¹,

Putaux²,

Jacques

et al. 1990

Microsc. Microanal. Microstruct.

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Résumé. 2014 Le bicristal de silicium contenant le joint de flexion 03A3=9 (122) [011] est utilisé comme matériau modèle pour étudier, à l'aide de la microscopie électronique à haute résolution, les méca-nismes de déformation à l'échelle atomique. Les (122) [011] is used as a model in order to study the very early stages of the mechanisms occurring at atomic scale close to the GB. The high resolution electron microscopy observations showed that most dislocations induced by the deformation integrated the GB by glide and climb. The evolution of the structure of the original GB has been studied for different strains and at different temperatures. The accumulation of the DSC dislocations into the GB leads to a variation in the misorientation angle between the two grains. In compression it increases, whereas it decreases in tension. Consequently, various E GBs have been detected. The key points are that, firstly, the structural evolution of the GB can be described with a limited number of structural units and secondly, depending on the deformation temperature, one 03A3 GB can exhibit two different structures.

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Models of grain boundaries in the diamond lattice I. Tilt about I 10

Cited by 165 publications

References 15 publications

The natural etching of sub-boundary dislocations on {100} diamond surfaces

The natural etching of sub-boundary dislocations on {100} diamond surfaces

“Solar” Silicon

Plasticity of a silicon bicrystal: a HREM study

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