“Solar” Silicon

Dietl, J.; Helmreich, D.; Sirtl, E.

doi:10.1007/978-3-642-68175-2_2

Cited by 18 publications

(6 citation statements)

References 51 publications

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“…Phosphorus (along with Al, Fe, B, Ti and V) is a critical impurity in high-purity quartz (HPQ) required as a starting material in the manufacture of semiconductor-grade silicon, photovoltaic materials and various frequency control devices. The total content of such electrically active impurities in, for example, solar-grade silicon products must lie in the range 0.1-10 μg g -1 (Dietl et al 1981). In trace amounts, P and B are used as dopants for semiconductors in order to provide free charge carriers.…”

mentioning

confidence: 99%

Refinement of Phosphorus Determination in Quartz by LA‐ICP‐MS through Defining New Reference Material Values

Müller

Wiedenbeck

Flem

et al. 2008

Geostandard Geoanalytic Res

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The aim of this study was to improve the quality of laser ablation inductively coupled plasma‐mass spectrometry (LA‐ICP‐MS) determination of phosphorus in crystalline quartz. Over the last decade, the Geological Survey of Norway has routinely performed trace element determinations on quartz from both operating and potential quartz deposits by LA‐ICP‐MS. The determined phosphorus concentrations were, with but few exceptions, consistently within the range of 10 to 30 μg g−1, results that seemed to be both too high and too consistent. The multi‐material calibration curve obtained from a suite of reference materials (NIST SRM 610, 612, 614, 1830, BAM No. 1 amorphous SiO2 glass) did not define a precise regression line. Published phosphorus concentrations for the reference materials are poorly constrained and the observed dispersions along the multi‐material calibration curve suggest that some of the reference values may be inaccurate. Furthermore, the calibration curve did not pass through the origin of the [(cps 31P/cps 30Si) · cone. Si] vs. P concentration diagram; thus, in addition to the uncertainties of the literature values of phosphorus, it is difficult to define the calibration curve. Three reference materials (NIST SRM 614, 1830, synthetic quartz KORTH) were sent for phosphorus accelerator implantation, providing an independent and accurate (± 3%) approach for determining phosphorus concentrations in crystalline quartz. The intrinsic phosphorus concentrations of the three implanted samples plus those for NIST SRM 610 and 612 were determined by secondary ion mass spectrometry (SIMS), yielding new phosphorus values for NIST SRM 610, 612, 614 and 1830. Using these new values resulted in a better defined LA‐ICP‐MS calibration curve. However, the source of the ICP‐MS related background could not be defined, such that it must still be empirically corrected for.

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mentioning

confidence: 99%

Refinement of Phosphorus Determination in Quartz by LA‐ICP‐MS through Defining New Reference Material Values

Müller

Wiedenbeck

Flem

et al. 2008

Geostandard Geoanalytic Res

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“…This technique gives excellent dimensional tolerance, although there are limitations arising from the thickness of the silicon wafers that is possible to produce while still maintaining high yield. Dietl et al, 1981. Other limitations arise from the wastage of silicon as 'kerf' loss during cutting. Generally, about 10-15 wafers per centimetre of ingot length were achieved by this process.…”

Section: Czochralski Growthmentioning

confidence: 99%

Crystalline Silicon Solar Cells

Green

2014

Series on Photoconversion of Solar Energy

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“…One of the promising technologies for obtaining silicon that meets the requirements for silicon of "solar quality" is the direct purification of metallurgical silicon to obtain improved metallurgical silicon (upgraded metallurgical-grade silicon-UMG-Si). Work in this area began at the end of the 1980s by Siemens, Solarex, Bayer, Heliotronic (subsidiary of Wacker Chemie), and a number of other American and Japanese companies [14][15][16][17].…”

Section: Upgraded Metallurgical-grade Siliconmentioning

confidence: 99%

Integration of Kazakhstan Technologies for Silicon and Monosilane Production with the Suitable World Practices for the Production of Solar Cells and Panels

et al. 2022

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In this review article, the state of the art of the complete processing chain in the production of solar photo-electric modules from raw materials (quartzites, quartz sand) is detailed. In particular, the silicon and silane production technologies of the Institute of Physics and Technology of Almaty, Kazakhstan, can become part of an expansive technologies chain. Such integration could present a number of benefits in comparison with the analogs, including less environmental pressure and increased safety. The combination of innovative production technologies of highly effective solar cells and modules with competitive production technologies of solar-grade silicon and silane constitutes a basis for the creation of an industrial cluster in the field of silicon solar photo energy with a complete vertically integrated production cycle.

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“Solar” Silicon

Cited by 18 publications

References 51 publications

Refinement of Phosphorus Determination in Quartz by LA‐ICP‐MS through Defining New Reference Material Values

Refinement of Phosphorus Determination in Quartz by LA‐ICP‐MS through Defining New Reference Material Values

Crystalline Silicon Solar Cells

Integration of Kazakhstan Technologies for Silicon and Monosilane Production with the Suitable World Practices for the Production of Solar Cells and Panels

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