Models for the Description of Track Formation

Ion–solid interactions at the extremes of electronic energy loss: Examples for amorphous semiconductors and embedded nanostructures

“…Using a Stillinger-Weber-like interatomic potential [27] splined to a repulsive pair potential for small interatomic distances [28], the calculated radial distribution function was in good agreement with that determined experimentally, validating the approach of Gartner et al The passage of a swift heavy ion was simulated by depositing additional kinetic energy equally on each atom within a cylinder of 4 nm width and over a time interval of 1 ps. The latter is typical of the time required for the coupling of energy from the electronic to atomic subsystems [29] while the former is consistent with the calculations of Waligorski et al [30]. During the simulation, the MD cell was allowed to expand in the incident-ion direction, hence maintaining zero pressure, and ambient temperature was attained 100 ps after the energy deposition.…”

Identical Response of Insulators to Irradiations by Swift Heavy Ions: Application to Experiments on Gd2Ti2O7

“…[15] show an excellent agreement with the data, the track sizes calculated in Ref. [14] do not even remind of the original ones. There are also several similar elementary problems with this review in Ref.…”

“…When the value of Set provided by another source is used in the analysis this necessarily modifies the derived values of the w and f parameters and in this case Equations (2-4) of ATSM do not describe the track evolution any more. In a review of ATSM by Dufour and Toulemonde, such improper action was made both in the LO and HI ranges [14] and the equations with the derived parameters were applied to track data measured in Y3Fe5O12. Earlier the same data had been already analyzed by using ATSM correctly [15].…”

Fine structure of swift heavy ion track in rutile TiO2

“…Based on the inelastic thermal spike (i-TS) model 30,32,34 , two classical heat diffusion equations can be used to calculate the energy exchange between the electronic subsystem and atomic subsystem, driven by the temperature difference (T e -T a ) between the electronic subsystem temperature (T e ) and atomic subsystem temperature (T a ), which is stimulated by the energy inputs into the electronic subsystem A(r[ ], t) from the electronic stopping powers for specific ion velocity :…”

“…where C e , C a , K e and K a are the specific heats and thermal conductivities of the electronic and atomic subsystems, respectively. The electron-phonon coupling strength g is linked to the electron-phonon mean free path λ by the relation λ ~ K e /g 2 , which approximately equals B/g 2 (with B= 2 J/s/cm/K) in insulators 32,34 , and is scaled parameter in this model, the energy to melt E m [32][33][34]61 , is 0.69 eV/at for rutile 47 . The detailed physical properties of rutile TiO 2 used for the i-TS model calculation are presented in Table 2.…”