Modelling the temperature dependence of threshold current, external differential efficiency and lasing wavelength in QW laser diodes

Abstract

The temperature behaviour of GaAdGaAIAs DQW-GRINSCH high-power laser diodes is calculated by means of a numerical model. The model includes a microscopic description of gain and spontaneous radiative recombination, a phenomenological description of interface and Auger recombination, and includes a pumping-current-dependent leakage. Based on the model, the temperature dependences of the macroscopic parameters of threshold current, external differential efficiency and wavelength are calculated. The resulting numerical values for these parameters are in excellent agreement with our experiments. Spontaneous radiative recombination is shown to be the dominant loss mechanism,

Influence of heat source distributions in GaAs/GaAlAs quantum-well high-power laser arrays on temperature profile and thermal resistance

“…A detailed analysis of heat sources requires the knowledge of the spatial distribution of the different loss processes in the laser array [10]. From the measured power-current and voltage-current characteristics ( [8] sink temperatures, THS, can be determined. The loss power, PL, consists of (i) Joule heating, Pj, and (ii) losses associated with recombination phenomena in and around the pn-junction, Ppn.…”

“…In this paper, the temperature profile in a GaAs/GaA1As laser array is calculated under consideration of several loss processes and their different spatial distribution inside the semiconductor laser chip. The power densities of the temperature-dependent heat sources are calculated by using a model described in [8]. This model gives the contribution of spontaneous emission, Auger and interface recombination to the total loss power at a specific temperature.…”

Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions

“…In conventional laser diodes (LDs), output power control can be realized by changing the injection current; however, this process causes a wavelength shift because of Joule heating [1,2]. As a result, conventional LDs cannot control the output power while maintaining the wavelength.…”

Thermal properties of high power laser bars investigated by spatially resolved thermoreflectance spectroscopy

“…Several thermometric techniques such as thermoreflectance 8 , micro -Raman spectroscopy 9 , and micro-photoluminescence 10 are used to determine temperature distribution in the semiconductor laser. Information obtained in these experiments provide an insight into thermal processes occurring at devices' facets and consequently lead to increased reliability and substantially longer lifetimes of such structures.…”