Modelling the clamping force distribution among chips in press-pack IGBTs using the finite element method

Hasmasan, Adrian Augustin; Busca, Cristian; Teodorescu, Remus; Helle, Lars

doi:10.1109/pedg.2012.6254091

Cited by 10 publications

(5 citation statements)

References 9 publications

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“…When the input current is 350 A, the device is under the heating phase. Then, with the simulation results under both 0 A and 350 A input, the fatigue life of the PPI is calculated according to equation (12)(13)(14)(15)(16). The number of cycles to failure which evaluates the fatigue of the additional metallization area is shown in Fig.…”

Section: Fatigue Analysis Of Multi-chip Ppimentioning

confidence: 99%

“…In 2000, P. Cova et al created a thermomechanical simulation model to investigate the chip stress and strain due to power cycling conditions [12]. A. Hasmasan established a FE model to calculate the stress distribution inside the PPI device under different clamping conditions and found the uneven stress distribution phenomenon [13]. T. Poller et al analyzed the pressure distribution inside multi-chip PPI during both the clamping phase and heating phase.…”

Section: Introductionmentioning

confidence: 99%

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A Fully Coupled Model of Multi-Chip Press-Pack IGBT for Thermo-Mechanical Stress Distribution Prediction

Zhan

Zhu

Zhang

et al. 2022

IEEE Trans. on Ind. Applicat.

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In this paper, a fully coupled multi-physical model of multi-chip press-pack IGBT (PPI) considering surface roughness is proposed. This model realizes the coupling of the electrical-, thermal-and mechanical domains through contact resistance. The simultaneous prediction of temperature and stress under various surface roughness is achieved. Firstly, the fully coupled model and the contact resistance model are established. Secondly, both thermo-mechanical stress under the clamping phase and heating phase are analyzed. The influence of the surface roughness on the thermo-mechanical stress distribution is also investigated based on the proposed model. Results show that the surface roughness does not affect the thermo-mechanical stress distribution under the heating phase, while the amplitudes increase with surface roughness. Thirdly, the correctness of the model is verified by the temperature measurement and deterioration observation results. The observed fretting scratches on the additional metallization area after the power cycling test validates the correctness of the deformation prediction. Finally, the strain-life fatigue model of PPI is established, it turns out that the surface roughness has an impact on the fatigue life of the chip metallization area.

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Section: Fatigue Analysis Of Multi-chip Ppimentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Fully Coupled Model of Multi-Chip Press-Pack IGBT for Thermo-Mechanical Stress Distribution Prediction

Zhan

Zhu

Zhang

et al. 2022

IEEE Trans. on Ind. Applicat.

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“…Another thermo mechanical FEA study on PPIGBT was reported by Poller et al [5 and 6] who investigated the effect of external clamping pressure on the thermo mechanical behavior of an IGBT chip. A mechanical FEA study was presented by Hasmasan et al [7] for PPIGBT to calculate the clamping pressure distribution among chips for various clamping conditions. A similar study on PPIGBT was also reported by Pirondi et al [8 and 9].…”

Section: Fig 2: Press Pack Single Diode Devicementioning

confidence: 99%

Electro-thermo-mechanical modelling and analysis of the press pack diode in power electronics

Rajaguru

Bailey

et al. 2015

2015 21st International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)

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This paper details a finite element modelling approach of the press pack assembly process for a diode in a power electronic module. Molybdenum and aluminum graphite have been investigated as suitable materials for the contact pad. Contact analysis has been used to model the pressurized thermal interface in order to extract both the stress and temperature distribution in the diode. Average temperature and von Mises stress on the chip for a combination of clamping pressure, load current and contact pad material have been extracted from the modeling results. At present, based on the assumptions and modeling parameters used, Aluminum Graphite seems to have better performance in comparison with molybdenum in terms of generating a lower average chip temperature. Additionally optimum clamping pressure has been estimated by performing a numerical optimisation analysis in order to minimise both the average temperature and stress in the chip.

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“…Over the years, more complex models, such as those of multi-physical field (electrical-thermo-mechanical) FEM, have been developing to analyze the collector current, temperature and stress distribution [19]. A. Hasmasan found that the clamping conditions mainly influence the uneven stress distribution [20], which becomes much more complicated during the heating process due to its coupling with thermal and electrical performances [21]. As the clamping force increases, the on-state voltage and contact resistance of the PP IGBTs decreases [22].…”

Section: Introductionmentioning

confidence: 99%

Thermal and Mechanical Analyses of Clamping Area on the Performance of Press-Pack IGBT in Series-Connection Stack Application

Dai

Wang

et al. 2021

IEEE Trans. Compon., Packag. Manufact. Technol.

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Modelling the clamping force distribution among chips in press-pack IGBTs using the finite element method

Cited by 10 publications

References 9 publications

A Fully Coupled Model of Multi-Chip Press-Pack IGBT for Thermo-Mechanical Stress Distribution Prediction

A Fully Coupled Model of Multi-Chip Press-Pack IGBT for Thermo-Mechanical Stress Distribution Prediction

Electro-thermo-mechanical modelling and analysis of the press pack diode in power electronics

Thermal and Mechanical Analyses of Clamping Area on the Performance of Press-Pack IGBT in Series-Connection Stack Application

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