Thermal and Mechanical Analyses of Clamping Area on the Performance of Press-Pack IGBT in Series-Connection Stack Application

Dai, Siyang; Wang, Zhiqiang; Wu, Haimeng; Song, Xin; Li, Guofeng; Pickert, Volker

doi:10.1109/tcpmt.2021.3052175

Cited by 10 publications

(7 citation statements)

References 33 publications

(46 reference statements)

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“…This may lead to poor contact between the layers of edge sub‐modules. The resulting gap might be in the nanometer range up to a few micrometres [46]. Therefore, the contact resistance of the edge sub‐modules will be reduced, and the current of those sub‐modules may decrease, while the current of the central sub‐modules may increase.…”

Section: Package Degradation and Failure Modesmentioning

confidence: 99%

Overview of monitoring methods of press‐pack insulated gate bipolar transistor modules under different package failure modes

Liu

Yao

et al. 2022

IET Power Electronics

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Press-pack insulated gate bipolar transistor modules (PP-IGBTs) have been widely used in high-voltage and high-power-density applications, such as high-voltage direct-current (HVDC) converters, because of their advantages of low thermal resistance, double side cooling, and short-circuit failure mode. Package failure is one of the main reasons for IGBT module failure. Package condition monitoring is the key to realizing modules fault diagnosis, condition prediction, and intelligent operation and maintenance. At present, a variety of characteristic parameters, such as on voltage and junction temperature, are used in package condition monitoring. However, the characteristic parameters show different variation laws under different package degradation modes. Therefore, the relationship between package degradation modes and characteristic parameters is the key to realizing the condition monitoring, so as to improve the reliability of the power electronic system. In this paper, first, the package structure of a PP-IGBT is analyzed. Second, the mechanisms of fretting wear degradation, gate-oxide degradation, spring degradation, lid warping degradation, micro arcing degradation, short-circuit failure, and open-circuit failure are reviewed. The variation laws of characteristic parameters under each degradation and failure mode are then investigated. Finally, three difficult problems including characteristic parameter measurement, especially pressure monitoring, high-sensitivity detection, and characterization and evaluation, are discussed and analyzed.

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Section: Package Degradation and Failure Modesmentioning

confidence: 99%

Overview of monitoring methods of press‐pack insulated gate bipolar transistor modules under different package failure modes

Liu

Yao

et al. 2022

IET Power Electronics

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show abstract

“…Ref. [21] investigates the effects of the clamping area on collector deformation, temperature, and stress distributions using FEM for Press-pack IGBTs (PP-IGBTs), and also analyzed the effect of heat-sink thickness to maximize the stress evenness of the terminal PP-IGBT and reduce the overall length of the stack system. It can be concluded that the finite element simulation can accurately reflect the temperature and stress of IGBT devices, and can be used to study the effect mechanism of different parameters on temperature and stress.…”

Section: Introductionmentioning

confidence: 99%

A Condition Evaluation Simplified Method for Traction Converter Power Module Based on Operating Interval Segmentation

Wang

Zhou

Dongye

et al. 2023

Sensors

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In the actual operation of urban rail vehicles, it is essential to evaluate the condition of the traction converter IGBT modules. Considering the fixed line and the similarity of operation conditions between adjacent stations, this paper proposes an efficient and accurate simplified simulation method to evaluate IGBT conditions based on operating interval segmentation (OIS). Firstly, this paper proposes the framework for a condition evaluation method by segmenting operating intervals based on the similarity of average power loss between neighboring stations. The framework makes it possible to reduce the number of simulations to shorten the simulation time while ensuring the state trend estimation accuracy. Secondly, this paper proposes a basic interval segmentation model that uses the operating conditions as inputs to implement the segmentation of the line and is able to simplify the operation conditions of entire line. Finally, the simulation and analysis of the temperature and stress fields of IGBT modules based on segmented intervals completes the IGBT module condition evaluation and realizes the combination of lifetime calculation with actual operating conditions and internal stresses. The validity of the method is verified by comparing the interval segmentation simulation with actual test results. The results show that the method can effectively characterize the temperature and stress trends of traction converter IGBT modules in the whole line, which could support the fatigue mechanism and lifetime assessment reliability study of IGBT modules.

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“…Since the fully coupled models were available, the reliability analysis of PPI was widely conducted. Siyang Dai et al analyzed the influence of the clamping area on the thermal and mechanical characteristics in PPI [18]. E. Deng et al studied the influence of temperature on PPI pressure distribution by establishing a fully coupled multi-physical model [19].…”

Section: Introductionmentioning

confidence: 99%

A Fully Coupled Model of Multi-Chip Press-Pack IGBT for Thermo-Mechanical Stress Distribution Prediction

Zhan

Zhu

Zhang

et al. 2022

IEEE Trans. on Ind. Applicat.

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In this paper, a fully coupled multi-physical model of multi-chip press-pack IGBT (PPI) considering surface roughness is proposed. This model realizes the coupling of the electrical-, thermal-and mechanical domains through contact resistance. The simultaneous prediction of temperature and stress under various surface roughness is achieved. Firstly, the fully coupled model and the contact resistance model are established. Secondly, both thermo-mechanical stress under the clamping phase and heating phase are analyzed. The influence of the surface roughness on the thermo-mechanical stress distribution is also investigated based on the proposed model. Results show that the surface roughness does not affect the thermo-mechanical stress distribution under the heating phase, while the amplitudes increase with surface roughness. Thirdly, the correctness of the model is verified by the temperature measurement and deterioration observation results. The observed fretting scratches on the additional metallization area after the power cycling test validates the correctness of the deformation prediction. Finally, the strain-life fatigue model of PPI is established, it turns out that the surface roughness has an impact on the fatigue life of the chip metallization area.

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Thermal and Mechanical Analyses of Clamping Area on the Performance of Press-Pack IGBT in Series-Connection Stack Application

Cited by 10 publications

References 33 publications

Overview of monitoring methods of press‐pack insulated gate bipolar transistor modules under different package failure modes

Overview of monitoring methods of press‐pack insulated gate bipolar transistor modules under different package failure modes

A Condition Evaluation Simplified Method for Traction Converter Power Module Based on Operating Interval Segmentation

A Fully Coupled Model of Multi-Chip Press-Pack IGBT for Thermo-Mechanical Stress Distribution Prediction

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