Modelling of the active defects influence on the electrical characteristics of an SiGe-HBT

Benchiheb, Asma; Hobar, F.

doi:10.1016/j.cjph.2017.03.019

Chinese Journal of Physics

2017

DOI: 10.1016/j.cjph.2017.03.019

|View full text |Cite

Modelling of the active defects influence on the electrical characteristics of an SiGe-HBT

Asma Benchiheb

F. Hobar

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2022

Publication Types

Select...

Other1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Modelling of the active defects influence on the electrical characteristics of an SiGe-HBT

Cited by 1 publication

References 25 publications

Effects of doping profile and temperature on the bifacial solar cell performances

Effects of doping profile and temperature on the bifacial solar cell performances

Contact Info

Product

Resources

About