Modelling of low pressure chemical vapour deposition of Si3N4 thin films from dichlorosilane and ammonia

Peev, G.; Zambov, L.; Nedev, I.

doi:10.1016/0040-6090(89)90924-3

Cited by 13 publications

(7 citation statements)

References 11 publications

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“…In contrast, all the peaks corresponding to DCS disappear (NH3 peaks still remain), and the other peaks at mass numbers of 44 and 46 appear instead in the spectra for ]:3 and 1:4. This tendency was found also in the spectra at reactor temperatures of 573 and 773 K, while film deposition does not take place below about 873 K. In Table I, the observed major mass peaks, the corresponding neutral species and the measurement conditions are summarized, and include the spectra which do not appear in the figures 9 The ion species at 44 and 46 are assigned to Si(NII2) + and SiH2(NH2) +.…”

Section: Resultsmentioning

confidence: 66%

“…The stepwise replacement of Cl in SIC14 by NH2 was stated. It is noted that we can only know what kind of species is dominant in the gas phase from the QMS spectra and that quantitative estimation for the detected species cannot be achieved in the present discussion, since the efficiency of the detector for these species could not be corrected 9 It is considered that DCS directly reacts with NH3 with a very small activation energy and consequently converts to SiH2(NH2)CI (aminochlorosilane or ACS) in high NH3 conditions (gas-ratios from 1:3 to 1:5), as given by the following expresson, because of the existence of ACS even at a reactor temperature as low as 573 K SiH2CI2 + NH3 --> SiH2(NH2)CI + HCI…”

Section: Resultsmentioning

confidence: 92%

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Mass Spectrometric and Kinetic Study of Low‐Pressure Chemical Vapor Deposition of Si3 N 4 Thin Films from SiH2Cl2 and NH 3

Sorita

Satake

Adachi

et al. 1994

J. Electrochem. Soc.

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The deposition mechanism of Si3N4 films from dichlorosilane (DCS) and ammonia, formed by a conventional low‐pressure chemical vapor deposition system, was studied, combining mass spectrometric analysis and the “macrocavity method.” The dominant neutral species in the gas phase are NH3 and aminochlorosilane (ACS), which was produced by the gas‐phase reaction of DCS, in a high NH3 (a large NH3/DCS ratio) condition, while DCS dominantly exists in a low NH3 condition. Contrary to the mass spectrometric results, there is not a major dependence of the kinetic constants of the deposition precursors on the gas‐mixture ratio. By fitting the growth‐rate profiles to an optimal theoretical profile, both of the two kinds of precursor are estimated to have low activity. The conformal step coverage quality agrees with the small sticking probabilities estimated as 10−4 and 10−6. Those precursors can be assigned to DCS and ACS, so that the mass spectrometric data would be consistent with the growth profiles. The conversion to ACS is calculated based on an assumed simple kinetic form and leads to a qualitative interpretation for gas‐mixture ratio‐dependence of conversion. A kinetic model including precursor molecules is presented to correlate the mass spectrometric results, the growth‐rate profiles, and the step coverage quality.

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Section: Resultsmentioning

confidence: 66%

Section: Resultsmentioning

confidence: 92%

Mass Spectrometric and Kinetic Study of Low‐Pressure Chemical Vapor Deposition of Si3 N 4 Thin Films from SiH2Cl2 and NH 3

Sorita

Satake

Adachi

et al. 1994

J. Electrochem. Soc.

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“…Morosanu's outdated E(CVD, Si 3 N 4 ) review is complemented with few additional publications,. 3,[76][77][78][79][80][81][82] Activation energy appear regrouped around 3 clusters, with 9 counts of E(CVD, Si Silicon carbide SiC is a refractory ceramic usually executed at temperature much larger than Si CVD, such as 1700 °C. Nevertheless, there is much evidence for a similar crystal growth mechanism.…”

Section: Resultsmentioning

confidence: 99%

Chemical Vapor Deposition of Elemental Crystallogen Thin Films

Tomasini

2024

ECS J. Solid State Sci. Technol.

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A consolidation of the fundamentals of elemental crystallogen chemical vapor deposition (CVD) is a necessity in view of the extensive evidence accumulated over the last few decades. An in-depth understanding of deposition mechanisms via hydrides asks for a discerning understanding of molecular hydrogen dissociative adsorption, precursor thermal decomposition, and CVD growth rates. With those, a groundbreaking paradigm shift comes to light. GR activation energy E(GR) fingerprints the surface energy. SE ≈ 2E(GR) / (aa), where SE is surface energy, E(GR) activation energy, a lattice parameter. Hydride precursor thermal decomposition consistency with the corresponding solid growth kinetics is demonstrated. Heterogeneous TD kinetics captures a solid deposition and not a gas phase molecular reaction. Thermodynamic equilibrium is achieved during the heterogeneous thermal decomposition of silicon precursors. The popular split between mass-transfer and kinetic regimes is not supported by evidence. Three mechanisms are apparent. The first is controlled by a Si–H bond dissociation energy. The second is controlled by an H–H bond dissociation energy. The last is controlled by a Si–Si bond dissociation energy as lattice sites are sealed off with Si–H bonds.

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“…The axial diffusion in the systems with injection feeding can be disregarded because of the equalization of the limiting component concentration along the length of the reactor. Then, in accordance with the law of mass conservation dG, + dG2 dG [10] where dG is the convective change of the limiting component quantity in an elementary volume, dG2 is the quantity of the active component, consumed by an internal volume consumer (the chemical reaction) in an elementary volume, and dGa is the augmentation in the quantity of the active component resulting from injection in the elemen-tary volume. Thus, depending on the way of reagent introduction, two cases could be considered (Fig.…”

Section: Modelmentioning

confidence: 99%

Design of Injection Feed Multiwafer Low‐Pressure Chemical Vapor Deposition Reactors

Zambov

Popov

Ivanov

1998

J. Electrochem. Soc.

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A two-dimensional model has been developed for low-pressure chemical vapor deposition reactors with injection feeding of gas components. The classical methods for linear differential equations are applied to obtain analytical solutions of the model both with and without main gas flow in the system. Analysis of the model reveals a relationship between the reactor geometry and the process parameters for maintaining constant reagent concentration in the system. Injection design is determined by means of simulation study of definite deposition processes.

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Modelling of low pressure chemical vapour deposition of Si3N4 thin films from dichlorosilane and ammonia

Cited by 13 publications

References 11 publications

Mass Spectrometric and Kinetic Study of Low‐Pressure Chemical Vapor Deposition of Si3 N 4 Thin Films from SiH2Cl2 and NH 3

Mass Spectrometric and Kinetic Study of Low‐Pressure Chemical Vapor Deposition of Si3 N 4 Thin Films from SiH2Cl2 and NH 3

Chemical Vapor Deposition of Elemental Crystallogen Thin Films

Design of Injection Feed Multiwafer Low‐Pressure Chemical Vapor Deposition Reactors

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