Design of Injection Feed Multiwafer Low‐Pressure Chemical Vapor Deposition Reactors

Abstract

A two-dimensional model has been developed for low-pressure chemical vapor deposition reactors with injection feeding of gas components. The classical methods for linear differential equations are applied to obtain analytical solutions of the model both with and without main gas flow in the system. Analysis of the model reveals a relationship between the reactor geometry and the process parameters for maintaining constant reagent concentration in the system. Injection design is determined by means of simulation study of definite deposition processes.

Template‐Directed CVD of Dielectric Nanotubes

“…Table 1 gives a summary of the calculations for molecular gas flow parameters and reaction kinetic data of several CVD processes [4,45] Figure 1 that the Knudsen number (accounting for the kinetics of CVD through k¢) is the primary factor that determines the aspect ratio and hence the geometrical characteristics achieved for the deposited nanocylinders. Increasing Kn above 5 10 ±6 results in substantial degradation in nanotube wall thickness along the membrane pore length (z).…”