Electric-field assisted assembly has been used to place rod-shaped metal nanowires containing 4-{[2-nitro-4-(phenylethynyl)phenyl]ethynyl}benzenethiol molecules onto lithographically defined metal pads. In these systems the current-voltage characteristics exhibited negative differential resistance at room temperature with on-off peak-to-valley ratios of 1.80 to 2.21.

Electric-field-assisted assembly has been used to place rod-shaped metal nanowires containing 4-[[2-nitro-4-(phenylethynyl) phenyl] ethynyl] benzenthiol molecules onto lithographically defined metal pads. These junctions exhibited negative differential resistance. The quantum chemical approach was used to compare the properties of Au-bonded 4-[[2-nitro-4-(phenylethynyl) phenyl] ethynyl] benzenthiol molecule and a molecule that does not exhibit the negative differential resistance, Au-bonded 4-[[4-(phenylethynyl) phenyl] ethynyl] benzenthiol. The influence of the static electric field and charge variation were modelled for both systems.

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An electric-field assisted assembly has been used to place rod-shaped, metal-organic, molecule-metal nanowires onto lithographically defined metal pads allowing the electrical characterization of metal-molecule self-assembled monolayer-metal containing nanowires. Our results show that the parameters of metal-molecule metal junctions are close to previously published data, so we have constructed systems containing insulating monolayers with reasonable properties. * Corresponding author. 161 Mod. Phys. Lett. B 2002.16:161-169. Downloaded from www.worldscientific.com by UNIVERSITY OF NORTH CAROLINA AT CHAPEL HILL on 02/03/15. For personal use only.

Fabrication of dielectric nanotubes from silicon dioxide and silicon nitride by a template-based electron cyclotron resonance (ECR) plasma-enhanced (PE) CVD is described. The nanotubes synthesized from SiH 4 -O 2 and SiH 4 -N 2 binary source reagent systems are smooth, transparent and at least 10 lm long. A mathematical description of the template-directed nanometer-scale CVD is developed to elucidate the appropriate process parameters that enable growth of high-aspect-ratio nanotubes with uniform wall thickness. The analysis of the model, by establishing general trends between process operating conditions and geometrical characteristics of the nanotubes, clarifies the mechanism of nanoscale CVD. The dielectric nanotubes obtained provide many opportunities for fabricating composite nanostructures and nanodevices.