Modelling of a Mixed Signal Processor Susceptibility to Near-Field Aggression

Boyer, Alexandre; Bendhia, S.; Sicard, Étienne

doi:10.1109/isemc.2007.209

Cited by 13 publications

(12 citation statements)

References 4 publications

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“…The effects of the ADC in the presence of electromagnetic interference (EMI) need to be researched. Several works refer to immunity measurement and the immunity model of the ADC, which are introduced in [1,2], but the models are only compared with the measurement immunity result and the output signal nonlinear distortion of the ADC is not easy to be modelled correctly. If the immunity measurement failure criterion is not well designed, the measurement result cannot reflect the actual behaviour of the ADC, and as a result the measurement result based models cannot work very well.…”

mentioning

confidence: 99%

Effects of conducted electromagnetic interference on analogue-to-digital converter

Wan¹,

Duval²,

Savatier³

et al. 2011

Electron. Lett.

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The effects of conducted electromagnetic interference on an analogueto-digital converter (ADC) are presented by the measurement. The measurement results reveal that the DC shift behaviour of the output conversion is caused by the continuous-wave interference. The DC shift behaviour produces a novel failure criterion for the immunity measurement of the ADC.Introduction: Analogue-to-digital converters (ADCs) are used widely in closed loop control systems. The ADC affects the stability and control performance of the system directly. In the automotive field, the complex electromagnetic environment (EME) causes electromagnetic compatibility (EMC) problems of the ADC. The effects of the ADC in the presence of electromagnetic interference (EMI) need to be researched. Several works refer to immunity measurement and the immunity model of the ADC, which are introduced in [1, 2], but the models are only compared with the measurement immunity result and the output signal nonlinear distortion of the ADC is not easy to be modelled correctly. If the immunity measurement failure criterion is not well designed, the measurement result cannot reflect the actual behaviour of the ADC, and as a result the measurement result based models cannot work very well. Very little research relates to the analysis of the effects of electromagnetic interference on the ADC. This Letter focuses on the nonlinear distortion of the output signal of the ADC caused by an out-of-band interference. The DC shift phenomenon is detected, analysed and used to perform a novel failure criterion for the immunity measurement. The novel failure criterion based immunity measurement result reflects the accurate behaviour of the ADC in large bandwidth.

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mentioning

confidence: 99%

Effects of conducted electromagnetic interference on analogue-to-digital converter

Wan¹,

Duval²,

Savatier³

et al. 2011

Electron. Lett.

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“…The coupling of electromagnetic fields produced by near-field probes on PCB traces or package interconnects have been addressed in some publications such as [15] and [16]. It consists in predicting the response of a quasi-TEM guided transmission to non uniform electric or magnetic field which decays rapidly with the distance.…”

Section: A Modeling Of Near-field Injection On a Transmission Linementioning

confidence: 99%

“…But it also relies on accurate models of the physical interaction between the injection probe and the die under test for several reasons: clarifying the nature of the coupling, predicting performances of injection probes, estimating the sensitivity of an circuit building blocks to EMI or the threat of EM attacks, validating by simulation countermeasures against EM fault injection. Some papers such as [15] and [16] report modeling methods of near-field injection on PCB lines or package interconnects. However, the modeling of near-field injection directly at die level has not been investigated and presents some distinctive features because of the multilayer nature of IC internal structure.…”

Section: Introductionmentioning

confidence: 99%

Modeling Magnetic Near-Field Injection at Silicon Die Level

Boyer

Vrignon²,

Cavarroc

2016

IEEE Trans. Electromagn. Compat.

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International audienceNear-field injection at silicon die level is a promising application for various area such as the analyses of integrated circuit (IC) susceptibility to electromagnetic interferences and security for cryptographic applications. This paper presents a first attempt to simulate the voltage induced on integrated circuit interconnects by a magnetic field probe. The validation of the simulation results is based on near-field injection performed on a test chip containing various types of interconnects and on-chip voltage sensors

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“…The output of an ADC conversion result equals 10 . The input signal (V in ) and the conversion reference voltage (V ref ) will influence the conversion result of the ADC.…”

Section: Measurementsmentioning

confidence: 99%

Improved Immunity Measurement of a Microcontroller to Conducted Continuous Wave Interference

Wan¹,

Ge²,

Zhou³

et al. 2013

PIER M

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This paper discusses an improved in-situ immunity measurement test bench of a microcontroller-PIC18F458 to conducted continuous wave interference (CWI). The updated measurement algorithm gives more accurate measurement result. Compared with normal failure criterion, the DC shift failure criterion is adopted because it gives better description of the immunity behavior of the microcontroller. Finally, the susceptibility results are explained in detail.

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Modelling of a Mixed Signal Processor Susceptibility to Near-Field Aggression

Cited by 13 publications

References 4 publications

Effects of conducted electromagnetic interference on analogue-to-digital converter

Effects of conducted electromagnetic interference on analogue-to-digital converter

Modeling Magnetic Near-Field Injection at Silicon Die Level

Improved Immunity Measurement of a Microcontroller to Conducted Continuous Wave Interference

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