Modelling and simulation of reliability for design

Mathewson, A.; O'Sullivan, P.; Concannon, A.; Foley, Sean; Minehane, S.; Duane, Russell; Palser, K.

doi:10.1016/s0167-9317(99)00432-3

Cited by 14 publications

(5 citation statements)

References 72 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Moreover, Stress-migration (SM) is due to the development of large tensile and compressive stress region at cathode and anode respectively as a combined consequence of the atomic migration and also due to the different thermal expansion coefficients of a narrow metal line and passivation or inter-metal dielectric material [13]. Hydro-static stress is proved to be the main driving force for void nucleation; regions with the most concentrated hydrostatic tensile stress are assumed to be the most probable sites for void nucleation [14,15].…”

Section: Previous Studies Reviewmentioning

confidence: 99%

Progress in the Development of an Electro-Migration Modelling Methodology

Zhu¹,

Kotadia²,

Xu³

et al. 2014

Proceedings of 10th World Congress on Computational Mechanics

View full text Add to dashboard Cite

Section: Previous Studies Reviewmentioning

confidence: 99%

Progress in the Development of an Electro-Migration Modelling Methodology

Zhu¹,

Kotadia²,

Xu³

et al. 2014

Proceedings of 10th World Congress on Computational Mechanics

View full text Add to dashboard Cite

“…Physical failure modeling is used extensively within simulation during detailed design and development. Mathewson et al [101] provided a review of simulation tools used within the design process for predictive inference as well as for supporting optimal design decisions. The majority of these models make extensive use of component level physical models which are adjusted by empirical data for calibration.…”

Section: Reliability Modelsmentioning

confidence: 99%

Expert Elicitation for Reliable System Design

Bedford¹,

Quigley²,

Walls³

2006

Statist. Sci.

View full text Add to dashboard Cite

This paper reviews the role of expert judgement to support reliability assessments within the systems engineering design process. Generic design processes are described to give the context and a discussion is given about the nature of the reliability assessments required in the different systems engineering phases. It is argued that, as far as meeting reliability requirements is concerned, the whole design process is more akin to a statistical control process than to a straightforward statistical problem of assessing an unknown distribution. This leads to features of the expert judgement problem in the design context which are substantially different from those seen, for example, in risk assessment. In particular, the role of experts in problem structuring and in developing failure mitigation options is much more prominent, and there is a need to take into account the reliability potential for future mitigation measures downstream in the system life cycle. An overview is given of the stakeholders typically involved in large scale systems engineering design projects, and this is used to argue the need for methods that expose potential judgemental biases in order to generate analyses that can be said to provide rational consensus about uncertainties. Finally, a number of key points are developed with the aim of moving toward a framework that provides a holistic method for tracking reliability assessment through the design process.Comment: This paper commented in: [arXiv:0708.0285], [arXiv:0708.0287], [arXiv:0708.0288]. Rejoinder in [arXiv:0708.0293]. Published at http://dx.doi.org/10.1214/088342306000000510 in the Statistical Science (http://www.imstat.org/sts/) by the Institute of Mathematical Statistics (http://www.imstat.org

show abstract

“…The C.A1OS behavioural model is built using the AIJOSFET basic electrical equations writteni in I UD-L-AAIS language. This behavioural model integrates the evolution of transistor characteristics as expressed by equationi (1). Several parameters can be investigated as mobility, drain access resistance of ALOSFET.…”

Section: B Bias Coniditions Analvs1imentioning

confidence: 99%

“…The concept of Design For Reliability (DFR) is a nexx challenge. Design For Reliabilit' strategxy is based on reliabilitx simulationi in the design flow that aims to predict the impact of phy sical phenomena from A1JOSFET to IC electrical characteristics over the operating time [1] [2]. Consequentlyreliability simulators need to take into account reliabilitv models of transistor.…”

Section: Introductionmentioning

confidence: 99%

A CMOS analogue function VHDL-AMS behavioral ageing model

Mongellaz

Fabert

Bestory

et al. 2004

2004 IEEE International Symposium on Industrial Electronics

View full text Add to dashboard Cite

This paper presents a method to develop stressed behavioral models of MOSFET and an analogue block : Operational Transconductance Amplifier: Our approach is based on an experimental case study of CA1OS technology ageing That implies experimental tests to ev-aluate electrical ageing effects on MOSFET. The expeIrimental data set is used to build a fMOSFET device ageing I IDL-AM1S model that is included in an OTA I HDIL-AM1S model to define a stressed behaivioral model of the amplifier.

show abstract

Modelling and simulation of reliability for design

Cited by 14 publications

References 72 publications

Progress in the Development of an Electro-Migration Modelling Methodology

Progress in the Development of an Electro-Migration Modelling Methodology

Expert Elicitation for Reliable System Design

A CMOS analogue function VHDL-AMS behavioral ageing model

Contact Info

Product

Resources

About