Modelling and Realization of a Monolithic 27 GHz HEMT Amplifier in Coplanar Waveguide Technology

Bischof, W.; Ehrlinger, W.; Berroth, Manfred; Reinert, W.

doi:10.1109/euma.1990.336186

Cited by 5 publications

References 3 publications

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An 18-34-GHz dynamic frequency divider based on 0.2- mu m AlGaAs/GaAs/AlGaAs quantum-well transistors

Thiede

Berroth

Nowotny

et al. 1993

IEEE J. Solid-State Circuits

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D IGITAL frequency dividers are of increasing importance in a wide field of device applications for high-speed communication systems and high-end measuring equipment. Ever-increasing frequency limits have led to the demand for GaAs approaches. Dynamic frequency dividers based on 0.2-J.!m GaAs MES-FET's have achieved a 26.5-GHz operational frequency [1]. Operation also at 26.5 GHz was reponed based on 0.25-J.!Tn inverted AIGaAs HEMT technology [2], [3]. High-speed ECL static frequency dividers using Si bipolar transistors, AIGaAs/GaAs hetero bipolar transistors, and AllnAs/InGaAs HBT's have achieved operation at 25 GHz, 34.8 GHz, and 39.5 G Hz. respectively [4)-{6]. A promising technology for AlGaAs/GaAs/AlGaAs quan tum-well transistors with double-delta doped supply layers [7) and gate lengths down to 0.2 JlTn [8) was developed at our institute, for high-speed logic [9], [I 0], analog circuits [II], and optoelectronic lC's I l2]. An integration complexity of 20000 transistors was demonstrated [13]. The design and performance of a dynamic frequency divider operating in the 18-34 GHz range will be presented here.

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An 18-34-GHz dynamic frequency divider based on 0.2- mu m AlGaAs/GaAs/AlGaAs quantum-well transistors

Thiede

Berroth

Nowotny

et al. 1993

IEEE J. Solid-State Circuits

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Variable impedance tuner for MMIC's

Bischof

1994

IEEE Microw. Guid. Wave Lett.

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A Monolithic HEMT-Amplifier with Feedback in Coplanar Waveguide Technology

Bischof¹,

Ehrlinger²,

Berroth

et al. 1992

1992 22nd European Microwave Conference

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A monolithic integrated wide-band amplifier is presented, which consists of two 0.3 pm HEMT-stages in GaAs/GaAIAs-Technology. The main signal path consists of a coplanar waveguide, which interfaces conveniently to the HEMT-cells. A feedback circuit with R, Land C connects gate and drain. To close the feedback loop small scale microstrip lines were combined with CPW /1, 2, 4/. Matching is done with a LC circuit at the gate and a combination of transmission line and capacitor at the drain. In addition there are some other passive elements for biasing, which reduce external components to a minimum. All element models were checked with measured data and placed into a CAD-library for easy use in the design process.

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Modelling and Realization of a Monolithic 27 GHz HEMT Amplifier in Coplanar Waveguide Technology

Cited by 5 publications

References 3 publications

An 18-34-GHz dynamic frequency divider based on 0.2- mu m AlGaAs/GaAs/AlGaAs quantum-well transistors

An 18-34-GHz dynamic frequency divider based on 0.2- mu m AlGaAs/GaAs/AlGaAs quantum-well transistors

Variable impedance tuner for MMIC's

A Monolithic HEMT-Amplifier with Feedback in Coplanar Waveguide Technology

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