Abstract:A monolithic integrated wide-band amplifier is presented, which consists of two 0.3 pm HEMT-stages in GaAs/GaAIAs-Technology. The main signal path consists of a coplanar waveguide, which interfaces conveniently to the HEMT-cells. A feedback circuit with R, Land C connects gate and drain. To close the feedback loop small scale microstrip lines were combined with CPW /1, 2, 4/. Matching is done with a LC circuit at the gate and a combination of transmission line and capacitor at the drain. In addition there are … Show more
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