Modelling and Experimental Validation of GaN Based Power Converter for LED Driver

Barba, Vincenzo; Solimene, Luigi; Palma, Marco; Musumeci, Salvatore; Ragusa, Carlo Stefano; Bojoi, Radu

doi:10.1109/eeeic/icpseurope54979.2022.9854660

Cited by 11 publications

(3 citation statements)

References 17 publications

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“…For this reason, a switching frequency f s = 500 kHz is chosen. At this frequency value, GaN FETs are suitable for this application [31]. The simulated waveforms of Fig.…”

Section: DC Current Regulatorsmentioning

confidence: 97%

A controlled variable inductor for an LCC-S compensated Wireless Power Transfer system

Solimene

Corti

Musumeci

et al. 2022

IECON 2022 – 48th Annual Conference of the IEEE Industrial Electronics Society

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In this paper, an LCC-S compensated wireless power transfer system regulated by a variable inductor is presented. The inductance variation is performed by exploiting the magnetic material saturation of the inductor core, regulating the DC bias. The magnetic design of the controlled variable inductor is proposed. A low-cost auxiliary circuit for the regulation of the bias current is proposed, and the performance is evaluated. The effect of the inductance variation on the output power regulation and conversion efficiency are evaluated through an experimental setup.

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“…For this reason, a switching frequency f s = 500 kHz is chosen. At this frequency value, GaN FETs are suitable for this application [31]. The simulated waveforms of Fig.…”

Section: DC Current Regulatorsmentioning

confidence: 97%

A controlled variable inductor for an LCC-S compensated Wireless Power Transfer system

Solimene

Corti

Musumeci

et al. 2022

IECON 2022 – 48th Annual Conference of the IEEE Industrial Electronics Society

Self Cite

View full text Add to dashboard Cite

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“…For this reason, a switching frequency

f_{\mathrm{s}}=500 \; \mathrm{kHz}

is selected for the experimental setup. At this frequency value, GaN FETs are recommended for this application [32, 33]. In fact, GaN FET devices are characterized by a low conduction resistance (

R_{\mathrm{DS,on}}= 2.2 \; \mathrm{m}\Omega

) and low breakdown voltage (80 V) and, when operating in a synchronous buck converter configuration, can help to regulate the magnetizing current accurately and reduce the switching losses.…”

Section: Magnetic Control In Lcc‐s Iwpt Systemmentioning

confidence: 99%

Experimental validation of magnetic control strategy in LCC‐S compensated wireless power transfer systems

Solimene,

Corti,

Musumeci

et al. 2024

IET Power Electronics

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The paper explores the use of the magnetic control strategy for the output power regulation of an LCC‐S compensated inductive wireless power transfer system. The magnetic control is implemented through a controlled variable inductor whose magnetization state is actively regulated by an auxiliary DC–DC converter. The principles for the design and regulation of the system are discussed, and the experimental setup for the validation of the regulation method is implemented. Several measurement results highlight the effectiveness and potential improvements of the magnetic control strategy for inductive wireless power transfer systems.

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“…Another relevant field of application is the lighting of LEDs for driving. GaN devices, with their high switching frequency and high-power density characteristics, enable compact and efficient driving systems that can be inserted into the lamp, reducing the overall size [45].…”

Section: Gan For Dc-dc Power Convertersmentioning

confidence: 99%

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Musumeci

Barba

2023

Energies

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High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced, wide-bandgap devices compared with the silicon and silicon carbide MOSFETs used in power converters. High-voltage and low-voltage device applications are discussed to indicate the most suitable area of use for these innovative power switches and to provide perspective for the future. A general survey on the applications of gallium nitride technology in DC-DC and DC-AC converters is carried out, considering the improvements and the issues expected for the higher switching transient speed achievable.

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Modelling and Experimental Validation of GaN Based Power Converter for LED Driver

Cited by 11 publications

References 17 publications

A controlled variable inductor for an LCC-S compensated Wireless Power Transfer system

A controlled variable inductor for an LCC-S compensated Wireless Power Transfer system

Experimental validation of magnetic control strategy in LCC‐S compensated wireless power transfer systems

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

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