Modeling the VCM‐ and ECM‐Type Switching Kinetics

Menzel, Stephan; Hur, Ji‐Hyun

doi:10.1002/9783527680870.ch14

Cited by 7 publications

(7 citation statements)

References 65 publications

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“…The so-called oxygen vacancies (V O ·· ) left behind in the oxide build a conductive filament significantly changing the resistance of the device. Depending on the polarity of the externally applied voltage, this filament can be ruptured and rebuilt consecutively switching the VCM device between a high resistive state (HRS) and a low resistive state (LRS) . These resistance states are non-volatile, can be read out non-destructively, and are used to store the information as logical “0” and “1”.…”

Section: Introductionmentioning

confidence: 99%

A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices

Kopperberg

Wiefels

Liberda

et al. 2021

ACS Appl. Mater. Interfaces

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Major challenges concerning the reliability of resistive switching random access memories based on the valence change mechanism (VCM) are short-term instability and long-term retention failure of the programmed resistance state, particularly in the high resistive state. On the one hand, read noise limits the reliability of VCMs via comparatively small current jumps especially when looking at the statistics of millions of cells that are needed for industrial applications. Additionally, shaping algorithms aiming for an enlargement of the read window are observed to have no lasting effect. On the other hand, long-term retention failures limiting the lifetime of the programmed resistance states need to be overcome. The physical origin of these phenomena is still under debate and needs to be understood much better. In this work, we present a three-dimensional kinetic Monte Carlo simulation model where we implemented diffusion-limiting domains to the oxide layer of the VCM cell. We demonstrate that our model can explain both instability and retention failure consistently by the same physical processes. Further, we find that the random diffusion of oxygen vacancies plays an important role regarding the reliability of VCMs and can explain instability phenomena as the shaping failure as well as the long-term retention failure in our model. Additionally, the results of the simulations are compared with experimental data of read noise and retention investigations on ZrO2-based VCM devices.

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Section: Introductionmentioning

confidence: 99%

A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices

Kopperberg

Wiefels

Liberda

et al. 2021

ACS Appl. Mater. Interfaces

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“…In modern nanometer‐thick devices, such as memristors and capacitors, solid oxide electrolytes such as YSZ are commonly employed in metal/electrolyte/metal configurations. In this case, the applied voltage becomes significant as it reaches values of 10 6 V/cm in the nanoscale, leading to migration reactions accompanied by degradation processes, redox reactions at interfaces, or irreversible internal reactions 60,61 …”

Section: Resultsmentioning

confidence: 99%

Investigation of diffusivity in nanometer‐thick yttria‐stabilized zirconia by chronoamperometry and its formalism

et al. 2023

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This work aims to demonstrate that chronoamperometry is a valuable tool for determining diffusivities in all‐solid‐state nanometer‐thick cells. The transient current in chronoamperometry of electrochemical cells under constant voltage is described by firstly considering purely capacitive processes, defined by RC circuit equations, and then purely diffusive processes, by Cottrell's equations. The physical meaning of the equations has been amply described in liquid cells with porous electrodes but scarcely in solid‐state cells. We studied Ru/YSZ/Au and Ru/YSZ/Ru parallel nano‐cells at temperatures between 50°C and 170°C and voltages between 0.5 V and 1.5 V, where non‐faradaic processes occur. The calculated diffusive and capacitive contributions at different temperatures obey the Arrhenius law. The activation energy was associated with vacancies, the major carrier during electrical transport. The analysis discusses other parameters, such as capacitance, effective concentration, and leakage current. The experimental diffusivity of YSZ electrolytes was compared with diffusivity values obtained by the statistical moment method.This article is protected by copyright. All rights reserved

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“…[4] The analysis complexity arises from the fact that the flux of charged species triggers internal, interface, and migration reactions, which are challenging to differentiate and incorporate into a comprehensive model of voltage-driven transport. [5,6] The scientific community has categorized the mechanisms based on the species and phenomena involved during the operation of the devices. Memristors that rely on the conduction of oxygen anions (O 2 − ), metal cations (M + ), and oxygen vacancies (O vac ) are commonly referred to as redox-based resistive switching random access memory (ReRAM).…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Voltage‐Driven Transport Model to Identify Ion Migration as the Rate‐Limiting Step in Memristive Switching

Vazquez‐Arce,

Molina‐Reyes,

Contreras

et al. 2023

Adv Elect Materials

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The physics behind the switching kinetics of memristors is gradually becoming clearer. The periods required for the onset of electromigration within memristors and the activation or deactivation of the low‐resistance state—referred to as the incubation and switching times—exhibit non‐linearity with applied voltage. This behavior prevails depending on the rate‐limiting step comprising nucleation and filament growth, electron transfer at the electrode/electrolyte interface, and ion migration through the electrolyte. Herein, a model is introduced for ion migration as the rate‐limiting step. This model analyses the incubation time and analytically correlates it with the electric field, diffusion coefficient, and temperature, facilitating the determination of threshold voltage and diffusivity from high to low resistance states for ion migration as the rate‐limiting step. By exploring parallel plate cells with Yttria‐Stabilized Zirconia (YSZ) of nanometer thickness, the application of the model is illustrated and the fundamental equations are applied to outstanding memristive cells in the literature. The applicability of this model to cells of various charge carriers is proposed, ranging from vacancies and electron transport to oxygen ions and metal cations, denoting its potential importance.

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Modeling the VCM‐ and ECM‐Type Switching Kinetics

Cited by 7 publications

References 65 publications

A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices

A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices

Investigation of diffusivity in nanometer‐thick yttria‐stabilized zirconia by chronoamperometry and its formalism

A Voltage‐Driven Transport Model to Identify Ion Migration as the Rate‐Limiting Step in Memristive Switching

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