Modeling the turn-off of IGBT's in hard- and soft-switching applications

Trivedi, M.; Shenai, K.

doi:10.1109/16.568054

Cited by 47 publications

(22 citation statements)

References 10 publications

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“…However, since the voltage rise is faster than the recombination time it is correct to assume that the stored charge is the same as in the on-state [4,9], that is:…”

Section: Drift Region Carrier Concentration: P(w D T)mentioning

confidence: 99%

“…Since at this stage of the turn-off the MOS current is nil, the electron current given in (3), acts as the base current for the pnp BJT causing a further collector current, β pnp I e , crossing the J1 junction [9]. Drain current is then:…”

Section: Output Capacitance Analytical Modelmentioning

confidence: 99%

“…The moving quasi-neutral base region boundary causes a hole current to flow through the J2 junction and an equal electron current flowing towards the J1 junction [4,5,9]:…”

Section: Output Capacitance Analytical Modelmentioning

confidence: 99%

“…Carrier concentration is constant below the gate field plate During the turn-off, the gate voltage is switched below the threshold voltage. For ease of analysis, fast gate voltage transition is considered so that the channel is rapidly removed and the MOS channel current is zero during the transient [6,9]. The device turns off as the stored carriers in the open base bipolar transistor are removed by sweep-out and recombination.…”

Section: Device Structure and Operationmentioning

confidence: 99%

“…In [6][7][8] a vertical IGBT model is developed in which the dV/dt during turn-off is studied. In [4,9] the voltage derivative during inductive turn-off for vertical IGBT is specifically studied.…”

mentioning

confidence: 99%

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Modeling turn-off voltage rise in SOI LIGBT

Napoli¹,

Pathirana

Udrea

2006

J Comput Electron

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The behavior of the drain voltage rise of the Lateral IGBT during inductive turn-off is studied in detail. Numerical simulations show that, if compared with the well known vertical IGBT, the Lateral IGBT presents a differences in the on-state stored charge and in the growth of the depleted region that result in a different drain voltage rise.In this paper a complete model for the voltage rise is devised through an accurate calculation of the equivalent output capacitance. The model is in excellent agreement with twodimensional simulations. Further, the paper shows that previously proposed models, which targeted the vertical IGBT, are not adequate for the description of the turn-off voltage rise in the Lateral IGBT.

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“…However, since the voltage rise is faster than the recombination time it is correct to assume that the stored charge is the same as in the on-state [4,9], that is:…”

Section: Drift Region Carrier Concentration: P(w D T)mentioning

confidence: 99%

Section: Output Capacitance Analytical Modelmentioning

confidence: 99%

“…The moving quasi-neutral base region boundary causes a hole current to flow through the J2 junction and an equal electron current flowing towards the J1 junction [4,5,9]:…”

Section: Output Capacitance Analytical Modelmentioning

confidence: 99%

Section: Device Structure and Operationmentioning

confidence: 99%

mentioning

confidence: 99%

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