Insulated Gate Bipolar Transistor

Abedinpour, S.; Shenai, K.

doi:10.1016/b978-012088479-7/50023-7

Cited by 2 publications

(2 citation statements)

References 16 publications

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“…Silicon carbide (SiC) power devices are expected to operate under high temperature and speed compared to conventional Si power devices [1]. The SiC power modules can reduce the size of cooling devices and filter components [2].…”

Section: Introductionmentioning

confidence: 99%

250°C Switching Behavior of All SiC Power Module with Sandwich Structure

Kato¹,

Simanjorang²,

Lang³

et al. 2014

Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials

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A wire-bond-less all SiC power module with sandwich structure is demonstrated. The circuit configuration of the module is 2-in-1, consisting of two SiC-junction field effect transistors (JFETs) and two SiC-Schottky barrier diodes (SBDs) which are arranged between two ceramic circuit boards. The double pulse switching test at 250°C is successfully carried out with 600 V, 15 A, and over 10 V/ns switching speed is realized.

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Section: Introductionmentioning

confidence: 99%

250°C Switching Behavior of All SiC Power Module with Sandwich Structure

Kato¹,

Simanjorang²,

Lang³

et al. 2014

Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials

View full text Add to dashboard Cite

show abstract

“…Insulated gate bipolar transistors (IGBTs) are semiconductor switching devices with three terminals (a gate, a collector and an emitter) [27]. IGBTs permit the unidirectional current flow from the collector to the emitter (power terminals) if the voltage applied between the gate and the emitter (signal terminals to send the command) is larger than a threshold value.…”

mentioning

confidence: 99%

Reliability Analysis and Repair Activity for the Components of 350 kW Inverters in a Large Scale Grid-Connected Photovoltaic System

et al. 2021

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The reliability of photovoltaic (PV) generators is strongly affected by the performance of Direct Current/Alternating Current (DC/AC) converters, being the major source of PV underperformance. However, generally, their reliability is not investigated at component level: thus, the present work presents a reliability analysis and the repair activity for the components of full bridge DC/AC converters. In the first part of the paper, a reliability analysis using failure rates from literature is carried out for 132 inverters (AC rated power of 350 kW each) with global AC power of 46 MW in a large scale grid-connected PV plant. Then, in the second part of the work, results from literature are compared with data obtained by analyzing industrial maintenance reports in the years 2015–2017. In conclusion, the yearly energy losses involved in the downtime are quantified, as well as their availability.

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Insulated Gate Bipolar Transistor

Cited by 2 publications

References 16 publications

250°C Switching Behavior of All SiC Power Module with Sandwich Structure

250°C Switching Behavior of All SiC Power Module with Sandwich Structure

Reliability Analysis and Repair Activity for the Components of 350 kW Inverters in a Large Scale Grid-Connected Photovoltaic System

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