Modeling the simultaneous effects of thermal and polarization in InGaN/GaN based high electron mobility transistors

Belmabrouk, Hafedh; Chouchen, Bilel; Feddi, E.; Dujardin, F.; Tlili, Iskander; Ayed, Mossaad Ben; Gazzah, Mohamed Hichem

doi:10.1016/j.ijleo.2019.163883

Cited by 12 publications

(5 citation statements)

References 26 publications

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“…

, a ternary compound, exhibits outstanding traits—encompassing the solar spectrum (0.78 eV to 3.42 eV), high absorption, radiation resistance, thermal stability, and exceptional chemical robustness [ 19 , 20 ]. Moreover, the optical properties of InGaN/GaN systems under different internal and external conditions have been intensively investigated [ 21 , 22 , 23 , 24 , 25 , 26 ]. Optoelectronic devices employing these materials can experience degradation due to the strong integrated electric field (BEF), leading to a decline in overall performance.…”

Section: Introductionmentioning

confidence: 99%

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

Abboudi,

EL Ghazi,

En-nadir

et al. 2024

Nanomaterials

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This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials. The optimization strategy encompasses manipulating confinement potential energy, controlling hydrostatic pressure, adjusting compositions, and varying thickness. The built-in electric fields in (In, Ga)N alloys and heavy-hole levels are considered to enhance the results’ accuracy. The finite element method (FEM) and Python 3.8 are employed to numerically solve the Schrödinger equation within the effective mass theory framework. This study reveals that meticulous design can achieve a theoretical photovoltaic efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) that surpasses the Shockley–Queisser limit. Moreover, reducing the thickness of the layers enhances the light-absorbing capacity and, therefore, contributes to efficiency improvement. Additionally, the shape of the confinement potential significantly influences the device’s performance. This work is critical for society, as it represents a significant advancement in sustainable energy solutions, holding the promise of enhancing both the efficiency and accessibility of solar power generation. Consequently, this research stands at the forefront of innovation, offering a tangible and impactful contribution toward a greener and more sustainable energy future.

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“…

Section: Introductionmentioning

confidence: 99%

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

Abboudi,

EL Ghazi,

En-nadir

et al. 2024

Nanomaterials

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“…The current study also considered the effective width of the quantum wells, which depends on the carrier density, which is not constant. It should be noted that the Femi level has also been computed using another method that enables convergence in a sophisticated way [16]. The hole valence band (heavy, light, and split-off band holes) energy, wave functions, and energy subbands are calculated using a 66  k.p method.…”

Section: Introductionmentioning

confidence: 99%

Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Yahyazadeh

2023

Preprint

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In this study, a numerical model was used to analyze the Auger current in c-plane InGaN/GaN multiple-quantum-well light-emitting diodes (MQWLED) under hydrostatic pressure. Finite difference techniques were employed to acquire energy eigenvalues and their corresponding eigenfunctions of \({\text{InGaN/GaN}}\) MQWLED, and the hole eigenstates were calculated via a 6×6 k.p method under applied hydrostatic pressure. Our calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the total Auger coefficient (76% and 20%, respectively). It was found that a change in pressure up to 10 GPa increases the carrier density up to 0.75×1019cm−3 and 0.56×1019cm−3 for the holes and electrons, respectively, and the effective band gap. Based on the result, it could decrease the exaction binding energy, rise the electric field rate up to 0.77MV/cm, and decrease the Auger coefficient and Auger current up to 2.1×10− 31 cm6s− 1and 75A/cm2 in the multiple-quantum well regions, respectively. Our studies provided more detailed insight into the origin of the Auger current drop under hydrostatic pressure in InGaN-based LEDs.

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“…It should be noted that the Fermi level has also been computed using another method that enables convergence in a sophisticated way. 16 The hole valence band (heavy, light, and split-off band holes) energy, wave functions, and energy subbands are calculated using a 6 × 6 k.p method.…”

Section: Introductionmentioning

confidence: 99%

“…The current study also considered the effective width of the quantum wells, which depends on the carrier density and is not constant. It should be noted that the Fermi level has also been computed using another method that enables convergence in a sophisticated way 16 . The hole valence band (heavy, light, and split-off band holes) energy, wave functions, and energy subbands are calculated using a 6×6 k.p method.…”

Section: Introductionmentioning

confidence: 99%

Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode

Yahyazadeh

Hashempour

2023

J. Nanophoton.

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A numerical model was used to analyze the Auger coefficient in a c-plane InGaN/ GaN multiple-quantum-well laser diode (MQWLD) under hydrostatic pressure. Finite difference techniques were employed to acquire energy Eigenvalues and their corresponding Eigenfunctions of InGaN/GaN MQWLD, and the hole Eigenstates were calculated via a 6 × 6 k.p method under applied hydrostatic pressure. It was found that a change in pressure up to 10 GPa increases the carrier density in the quantum well and barriers and the effective band gap. Based on the result, the exaction binding energy decreased, the electric field rate increased up to 0.77 MV∕cm, and the Auger coefficient decreased down to 2.1 × 10 −31 and 0.6 × 10 −31 cm 6 s −1 in the MQW and barrier regions, respectively. Also, the calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the Auger coefficient. Our study provides more detailed insight into the origin of the Auger recombination rate drop under hydrostatic pressure in InGaN-based light-emitting diodes.

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Modeling the simultaneous effects of thermal and polarization in InGaN/GaN based high electron mobility transistors

Cited by 12 publications

References 26 publications

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode

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