Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs

Esqueda, Ivan Sanchez; Barnaby, Hugh; McLain, Michael Lee; Adell, P.C.; Mamouni, F. El; Dixit, S.K.; Schrimpf, R.D.; Xiong, Wenjing

doi:10.1109/tns.2009.2012709

Cited by 31 publications

(7 citation statements)

References 12 publications

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“…Hole transport is characterized by charge "hopping" between shallow defect sites in the dielectric. Here, the trapped charge is accumulated, changing the surface potential of the semiconductor/dielectric [14], increasing the plate capacitance (C 0 ), which in turn, decreases the resonant frequency.…”

Section: Resultsmentioning

confidence: 99%

Film Bulk Acoustic-Wave Resonator based radiation sensor

Oiler

Qiu

Zhu

et al. 2010

2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems

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This paper describes a high-energy electromagnetic wave radiation detection device using zinc oxide (ZnO) based Film Bulk Acoustic-Wave Resonator (FBAR). The resonant frequency of the FBAR decreased after gamma radiation, with the peak sensitivity of 9.3 kHz/krad and minimum detectable dosage of 218 rad occurring at the lowest experimental dose of 20 krad (all dosages are calibrated with ZnO), while the sensitivity decreased with increasing total ionizing dosage. The incident radiation generated charges that was trapped near the ZnO-silicon nitride (SiN) interface, which increased the plate capacitance of the FBAR, resulting in the decrease of resonant frequency.

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Section: Resultsmentioning

confidence: 99%

Film Bulk Acoustic-Wave Resonator based radiation sensor

Oiler

Qiu

Zhu

et al. 2010

2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems

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“…3, the minority-carrier quasi-Fermi level ( ) will vary between source and drain, whereas the majority carrier quasi-Fermi level ( ) is position-independent. The total charge at semiconductor/oxide interface due to ionizing radiation effects is expressed as (3) TID effects in devices and ICs can be analyzed and modeled by incorporating the charge given by (3) into a description of MOS electrostatics that will be obtained through calculations of for our compact modeling purposes. This approach allows a continuous and accurate description of the radiation response from weak to strong inversion for equilibrium and non-equilibrium conditions.…”

Section: Modeling Approachmentioning

confidence: 99%

“…This can create a leakage path along the back surface of the Si body and can also affect the characteristics of the front surface through charge coupling under fully-depleted (FD) conditions [3], [4], [66]. SOI devices with thin Si bodies can transition between partially-depleted (PD) and fully-depleted (FD) conditions as a function of the terminal voltages and are said to operate in a dynamic depletion (DD) mode [67], [68].…”

Section: B Silicon-on-insulator (Soi) Devicesmentioning

confidence: 99%

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

Esqueda

Barnaby

King

2015

IEEE Trans. Nucl. Sci.

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106

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This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxidesemiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential ( ) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental characteristics from irradiated devices. The modeling approach is suitable for simulating TID and aging effects in advanced MOS devices and ICs, and is compatible with modern MOSFET compact modeling techniques. A circuit-level demonstration is given for TID and aging effects in SRAM cells.

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“…In addition, under ionizing radiation, semiconductors may produce energy levels in the bandgap that lead to leakage currents. 21 Therefore, the power consumption of digital circuits increases because of this non-zero off-state leakage current of transistors. 22,23 To overcome these challenges, M/NEMS switches can be an appropriate choice for the implementation of digital circuits.…”

Section: Introductionmentioning

confidence: 99%

Design and analysis of optical nano electro-mechanical-system-based logic circuits relied on movable waveguides

Gholami¹,

Sheikhaleh²,

Marvi³

et al. 2022

Opt. Eng.

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. An approach based on optical nano electro-mechanical-system (NEMS) switches is proposed in this paper to develop low-power logic circuits and processors. Based on the specific logic tasks expressed by sum-of-products (SOP) expressions, an array of switches can be appropriately arranged to implement various logic circuits. The logical output can be detected by translating the presence or absence of the light in the optical guided mode, which is controlled by the displacement of NEMS actuators under electrostatic forces. Therefore, to show the universality of the proposed method and its capability to extend processor circuits, the operation of a MUX (2:1) is analyzed. Furthermore, the presented switch’s functional characteristics and the logic circuits’ optical performance are obtained using the Finite Element Method (FEM) and Finite Difference Time Domain (FDTD) approaches. According to simulation results, the properties of the proposed switch, such as the operating voltage and the switching time, are 12 V and 2.6 μs, respectively. Consequently, the proposed fast and low-power actuator can be a promising choice for realizing low-power digital circuits, especially in the design of NEMS processors for low-power applications because of the significant reduction in its power consumption and immunity against electromagnetic radiation.

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Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs

Cited by 31 publications

References 12 publications

Film Bulk Acoustic-Wave Resonator based radiation sensor

Film Bulk Acoustic-Wave Resonator based radiation sensor

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

Design and analysis of optical nano electro-mechanical-system-based logic circuits relied on movable waveguides

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