Modeling the Influence of the Acceptor-Type Trap on the 2DEG Density for GaN MIS-HEMTs

Shi, Yijun; Chen, Wanjun; Sun, Ruize; Liu, Chao; Xin, Yajie; Xia, Yun; Wang, Fangzhou; Xu, Xiaorui; Deng, Xiaochuan; Chen, Tangsheng; Zhang, Bo

doi:10.1109/ted.2020.2986241

Cited by 10 publications

(14 citation statements)

References 29 publications

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“…The experimental 2DEG density in the subthreshold region is extracted from the device transfer characteristic, and the experimental 2DEG density in the above-threshold region is extracted from the gate capacitance characteristic, as stated in [11]. For the calculation of the 2DEG density and threshold voltage through the presented model and the model in [12], the experimental distribution function of the interface acceptor-type trap is needed, which is extracted by fitting the interface trap states calculated from the AC conductance measurement (Fig. 3 (a)) with eq.…”

Section: Resultsmentioning

confidence: 99%

“…The simplified device structure of GaN MOS-HEMT is shown in Fig. 1 previous work [11][12], the threshold voltage (Voff) of the short-channel GaN MOS-HEMT without the influence of the drain voltage can be calculated from the expression given below. The symbols' definition can be found in Table I.…”

Section: A Threshold Voltage Modelmentioning

confidence: 99%

“…The ionization condition of the acceptor-type trap is closely related with the applied voltage and its distribution function. In this work, the distribution function of the interface acceptor-type trap is assumed to be similar to the form in [11][12]. So the density of the ionized interface acceptor-type trap can be obtained by the integral of the product of Dit,A with their respective f(Ef, Et) from Ei_(GaN) to Ec_(GaN), shown in eq.…”

Section: A Threshold Voltage Modelmentioning

confidence: 99%

“…As the main concern, the acceptor-type trap formed in the fabrication process plays an important role on the device characteristics [6,7]. The ionization condition of those acceptor-type traps is critical for accurately modeling the characteristics of GaN MOS-HEMTs and closely related to the applied voltage [6][7][8][9][10][11][12]. For modeling the 2-dimension electron gas (2DEG) density and threshold voltage of GaN MOS-HEMTs, Wei et al [9] and Sun et al [10] have only considered the invariant ionized trap density, which fails to include the right ionization condition of the acceptor-type traps.…”

Section: Introductionmentioning

confidence: 99%

“…However, the drain voltage (VD) affects the threshold voltage in the way of pulling down the Fermi level of the electron and releasing the electron trapped in the acceptor-type traps, which will reduce the negative fixed charge in gate region. In our previous work [11,12], the influence of the drain voltage on the threshold voltage has not been considered. Because for the long-channel device, the drain-voltage induced reduction of the negative fixed charge in gate region nearly has no effect on the threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

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Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT

Shi

Chen

et al. 2021

IEEE J. Electron Devices Soc.

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In this work, the influence of the acceptor-type trap on the threshold voltage and short-channel effect is analyzed and modeled for the short-channel GaN MOS-HEMT. Particularly, the analysis and modeling are carried out with the dependences of the traps' ionization condition on the gate voltage and drain voltage considered. From the calculated results based on the proposed threshold voltage model, it is found that both the interface acceptor-type trap and buffer acceptor-type trap play a vital role in the threshold voltage reduction for the short-channel AlGaN/GaN MOS-HEMT, due to the acceptor-type trap's detrapping effect induced by the drain voltage. The calculated results are well supported by the numerical simulation, which verified the correctness and accuracy of the presented model. Index Terms-GaN MOS-HEMT, short-channel effect threshold voltage, acceptor-type trap.

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Section: Resultsmentioning

confidence: 99%

Section: A Threshold Voltage Modelmentioning

confidence: 99%

Section: A Threshold Voltage Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT

Shi

Chen

et al. 2021

IEEE J. Electron Devices Soc.

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Reverse Blocking Enhancement‐Mode AlGaN/GaN HEMTs with Hybrid p‐GaN Ohmic Drain on the Si Substrates

Zhao,

Ren,

Luo

et al. 2023

Physica Status Solidi (a)

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Hybrid p‐GaN Ohmic drain reverse blocking high electron mobility transistors (RB‐HEMTs) and conventional p‐GaN Enhancement‐mode (E‐mode) HEMTs are designed and fabricated on the Si substrates. Compared with the conventional p‐GaN HEMT, the RB‐HEMT can achieve great reverse blocking capability. The forward and reverse blocking voltages of the RB‐HEMT are 1116 V and 1056 V and the turn‐on voltage of the device is 1.07 V. When the temperature rises from 25 °C to 150 °C, the turn‐on voltage of the RB‐HEMT increases from 1.07V to 1.10 V, and the Vth increases from 1.97V to 2.07 V. The difference in turn‐on voltage and threshold voltage is mainly due to the different metals in contact between the gate and drain electrodes and p‐GaN. The reverse leakage current of the RB‐HEMT is 1.16 × 10−1 mA mm−1 when the temperature is 150 °C, which still keep good reverse blocking ability at high temperatures.

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Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm

Hamza

Nirmal

Fletcher

et al. 2021

AEU - International Journal of Electronics and Communications

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Modeling the Influence of the Acceptor-Type Trap on the 2DEG Density for GaN MIS-HEMTs

Cited by 10 publications

References 29 publications

Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT

Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT

Reverse Blocking Enhancement‐Mode AlGaN/GaN HEMTs with Hybrid p‐GaN Ohmic Drain on the Si Substrates

Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm

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