Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm

Hamza, K. Husna; Nirmal, D.; Fletcher, A.S. Augustine; Arivazhagan, L.; Ajayan, J.; Natarajan, Raghu N.

doi:10.1016/j.aeue.2021.153774

Cited by 21 publications

(7 citation statements)

References 34 publications

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“…The maximum pulse power density at which thermal breakdown occurs was found to be up to 1.8 GW/cm 3 and 5.1 GW/cm 3 at 77 K and 300 K, respectively. Note that, taking into account GaN epilayer thickness of 10 µm, the maximum current density per unit width of the material is estimated to be about 3.9 (3.4) A/mm at 300 K (77 K), which is considerably larger than the 2.4 A/mm values achieved in advanced devices based on the AlGaN/GaN HEMT structures at room temperature [ 31 , 32 , 33 ].…”

Section: Resultsmentioning

confidence: 99%

High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate

et al. 2022

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The n-type GaN epilayers with low electron density were developed on a native substrate using the metalorganic vapour phase epitaxy method and investigated under pulsed electric fields until material breakdown and optically in the spectrum range from 0.1 THz to 60 THz at two temperatures of 77 K and 300 K. The epilayers demonstrated the low-field electron mobility and density values reaching up to 1021 cm2/V·s and 1.06 × 1016 cm−3 (at 300 K) and 2652 cm2/V·s and 0.21 × 1016 cm−3 (at 77 K), respectively. Maximum injected electric power value till the damage of the GaN epilayer was found to be up to 1.8 GW/cm3 and 5.1 GW/cm3 at 77 K and 300 K, respectively. The results indicate new practical possibilities of the GaN material controlled by an external electric field.

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Section: Resultsmentioning

confidence: 99%

High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate

et al. 2022

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“…The linearity of the power amplifier can be improved at the circuit level or by enhancing the device properties such as the device structure, layer sequence or material composition. When any linearization approaches, such as power backoff or digital pre-distortion, are implemented at the circuit level, these methods increase circuit complexity [19,27]. Whereas, a reduction in nonlinearity at the intrinsic level of the device may improve the performance of a system with less complex circuits.…”

Section: Introductionmentioning

confidence: 99%

“…Whereas, a reduction in nonlinearity at the intrinsic level of the device may improve the performance of a system with less complex circuits. The main cause of nonlinearity in GaN HEMT at high frequencies is the sharp decrease in the device g m after the peak value with increased gate bias [16,19,27]. This phenomenon of g m curve dropdown at higher gate voltages is caused due to the decrease in saturation velocity of the carriers and the non-linear source resistance of GaN HEMTs [15].…”

Section: Introductionmentioning

confidence: 99%

“…As AlGaN has polarization properties, linearly grading the Al composition in the AlGaN layer leads to carrier spreading inside the channel instead of being confined at the heterointerface. This lowers the local carrier densities which further improves the carrier saturation velocity and reduces the g m drop at higher gate voltage [16,19,27].…”

Section: Introductionmentioning

confidence: 99%

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Linearity improvement in graded channel AlGaN/GaN HEMTs for high-speed applications

Jena,

Das,

Baral

et al. 2023

Phys. Scr.

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AlGaN HEMTs are popular devices for high-frequency applications. At higher frequencies, nonlinearity effects are major concerns and need serious attention. In this work, we have attempted to improve the linearity performance of graded channel AlxGa1-xN/GaN HEMTs in comparison with abrupt channel GaN HEMTs through Technology Computer Aided (TCAD) simulation. In graded channel HEMTs, linearly grading of Al composition in the AlGaN layer, reduces the local carrier densities and provides improvement in the carrier saturation velocity. This provides an avenue to improve the overall linearity performance. A complete set of figures of merits (FOMs) such as g_m2, g_m3, 〖VIP〗_2, 〖VIP〗_3, 〖IIP〗_3 and 〖IMD〗_3 for both devices are presented. The simulation results have been calibrated with reported experimental results available in the literature. The graded devices are observed to have better transconductance (gm) and drain current for gate voltages greater than -2V. The drop in gm is reduced by nearly 50% at the higher gate-to-source voltages. Moreover, the RF figure of merits such as the current gain cutoff frequency (fT) and a maximum frequency of oscillation (fmax) have been calculated for both devices. Due to the graded channel fT increases by 20% and fmax becomes twice which makes it a better choice for high-voltage and high-power applications. The impact of interface trap and leakage current performance on the graded channel device are also reported. The cutoff frequency reduces by 25% with an increase in trap charge concentration from 9e17/cm2 to 1e19/cm2. Also, it has been found that the graded channel device shows better linearity and lower intermodulation distortion in comparison to the abrupt device which has been calculated from the linearity parameters. The high gate leakage current in the case of the graded channel device can be reduced by adding a thin GaN cap layer on the AlGaN channel which can be a future prospect of improving the performance of the graded GaN device.

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“…It presents a simple circuit configuration for power switch applications, simple design for RF and microwave circuits [2,3], and operates at harsh environments [3,4]. The HEMT is based on a heterostructure of AlGaN/GaN that gives rise to two types of internal polarizations (spontaneous and piezoelectric polarizations), which forms a two-dimensional electron gas (2DEG) [5], providing high electron mobility and high electron density at * Author to whom any correspondence should be addressed. the interface of AlGaN/GaN, even though it usually generates a normally-on transistor.…”

Section: Introductionmentioning

confidence: 99%

MISHEMT intrinsic voltage gain under multiple channel output characteristics

Canales,

Perina,

Martino

et al. 2023

Semicond. Sci. Technol.

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In this paper the MISHEMT device (Metal/Si3N4/AlGaN/AlN/GaN - Metal-Insulator-Semiconductor High Electron Mobility Transistor) is studied focusing mainly on the impact of the multiple conductions on the intrinsic voltage gain (Av). It is shown that the total drain current is composed of 3 different drain current components, whereof one is related to theMIS channel and the other two are related to HEMT channels. The device output characteristics present double drain voltage saturation that gives rise to a double plateau in the saturation region of the output characteristics. This behavior relies also on the gate voltage, so the output characteristics and analog parameters extraction are bias dependent. The intrinsic voltage gain increases thanks to the Early voltage increment in the second plateau whereHEMT conduction is dominant. Electron concentration profiles were simulated in order to investigate the device saturation regime.investigate the device saturation regime.

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Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm

Cited by 21 publications

References 34 publications

High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate

High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate

Linearity improvement in graded channel AlGaN/GaN HEMTs for high-speed applications

MISHEMT intrinsic voltage gain under multiple channel output characteristics

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