IEEE Trans. Electron Devices
 2019
DOI: 10.1109/ted.2019.2939585
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Modeling the Impact of the High-Field Region on the $C-V$ Characteristics in GaN HEMTs

Jason Hodges
1
,
Sayed Ali Albahrani
2
,
Dirk Schwantuschke
3
et al.
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Cited by 3 publications
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Accurate Non-linear Large Signal Physics-based Modeling for Ka-band GaN Power Amplifier Design with ASM-HEMT

Hodges
1
,
Albahrani
2
,
Schwitter3
et al. 2021
2021 IEEE MTT-S International Microwave Symposium (IMS)
6
0
1
0
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Accurate Non-linear Large Signal Physics-based Modeling for Ka-band GaN Power Amplifier Design with ASM-HEMT

Hodges
1
,
Albahrani
2
,
Schwitter3
et al. 2021
2021 IEEE MTT-S International Microwave Symposium (IMS)
6
0
1
0
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A Qualitative Explanation of the AlGaN/GaN HEMT Nonlinear Intrinsic Capacitances

Gomes1,
Nunes2,
Barradas3
et al. 2022
2022 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)
2
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Accurate Modelling of GaN HEMT Capacitances in the Framework of the ASMHEMT Model

Albahrani,
Schwantuschke,
Khandelwal
2023
2023 18th European Microwave Integrated Circuits Conference (EuMIC)
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