Accurate Non-linear Large Signal Physics-based Modeling for Ka-band GaN Power Amplifier Design with ASM-HEMT

Hodges, Jason; Albahrani, Sayed Ali; Schwitter, Bryan K.; Khandelwal, Sourabh

doi:10.1109/ims19712.2021.9574979

Cited by 6 publications

(1 citation statement)

References 7 publications

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“…However, the accuracy of the models was not examined under non-linear operations. In [11], a physics-based model based on ASM-HEMT is proposed. An electromagnetic simulation is implemented to develop the distributed effects at Ka-band.…”

Section: Introductionmentioning

confidence: 99%

Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects

Nouri

El-Ghazaly

2022

IEEE Access

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In this study, the transmission line concept and the electron transport theory are consolidated in a global modeling approach, the wave-electron-transport (WET) model, to account for the physical phenomena in millimeter-wave devices. No equivalent circuit model is required to represent the innate properties of the device. Hence, the model is reliable for both small-and large-signal analyses. The electrodes of a transistor act as coupled multi-conductor transmission lines at millimeter-wave bands. The WET model consists of a device solver to obtain solutions for carrier-transport equations of the intrinsic device, and an electromagnetic solver (EM solver) to provide solutions for the governing transmission lines equations. As it is crucial to transfer data between these two solvers, an interface scheme is also developed and included in the WET model. The extrinsic parameters of the device are extracted using a novel systematic technique merely based on the physical structure of the transistor. In this paper, the modeling procedure is applied to a fabricated GaN-HEMT device. Power sweep analysis has verified the accuracy of the proposed model under both linear and non-linear operations. Non-uniform voltage distribution caused by traveling waves over the electrodes is elaborately discussed to demonstrate the necessity of incorporating distributed effects.INDEX TERMS Electromagnetic-wave propagations, millimeter-wave transistor, non-linear operations, transmission line concept, wave-electron-transport model.

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Section: Introductionmentioning

confidence: 99%

Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects

Nouri

El-Ghazaly

2022

IEEE Access

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Statistical Modeling of Manufacturing Variability in GaN HEMT I-V Characteristics with ASM-HEMT

Chavez

Miller

Davis

et al. 2022

2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

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An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications

Miller,

Brown,

Elliott

et al. 2023

IEEE J. Electron Devices Soc.

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This paper reports a temperature-dependent ASM-HEMT for modeling GaN HEMTs at elevated temperatures. Modifications to the standard ASM-HEMT were developed to accurately capture the DC and RF measurements collected at varying chuck temperatures. Several results are reported which validate the model including DC-IV, pulsed-IV, scatteringparameter, and load-pull measurements. The model is then used to extrapolate the performance of the GaN HEMT to twice the operating temperature at which the model was validated. This work could be useful for understanding and modeling GaN HEMTs in high-temperature environment applications.

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Accurate Non-linear Large Signal Physics-based Modeling for Ka-band GaN Power Amplifier Design with ASM-HEMT

Cited by 6 publications

References 7 publications

Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects

Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects

Statistical Modeling of Manufacturing Variability in GaN HEMT I-V Characteristics with ASM-HEMT

An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications

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