Modeling the impact of stress on silicon processes and devices

Moroz, Victor; Strecker, N.; Xu, Xiaopeng; Smith, Lee; Bork, Ingo

doi:10.1016/s1369-8001(03)00068-4

Cited by 46 publications

(22 citation statements)

References 9 publications

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“…The channel stress is calculated using 2-D process simulation where all intentional and unintentional stress sources as well as the stress evolution during the entire process flow are taken into account [7]. The distribution of the longitudinal stress component in a typical case is shown in Fig.…”

Section: Stress Simulationmentioning

confidence: 99%

Exploring the limits of stress-enhanced hole mobility

Smith

Moroz

Eneman

et al. 2005

IEEE Electron Device Lett.

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Hole mobility is found to more than double in fabricated p-MOSFETs with SiGe source/drain due to longitudinal compressive stress in the channel exceeding 1 GPa. The maximum observed low-field mobility enhancement is 140% at a simulated stress level of 1.45 GPa. The mobility enhancement is approximately linear with stress at moderate levels but becomes super-linear above 1 GPa. An important consequence of this behavior is that for moderate stress levels, an average channel stress can be used to estimate the performance of transistors with a nonuniform stress distribution across the channel width. Two alternative approaches to model stress-enhanced hole mobility are suggested. Analysis of the physical effects behind the experimental observations reveals the relative roles of band repopulation and mass modulation. In addition, previously published wafer bending experiments with compressive stress levels below 400 MPa are used to implicitly verify the accuracy of the stress simulations.Index Terms-MOSFET, SiGe, strained-silicon, technology computer-aided design (TCAD).

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Section: Stress Simulationmentioning

confidence: 99%

Exploring the limits of stress-enhanced hole mobility

Smith

Moroz

Eneman

et al. 2005

IEEE Electron Device Lett.

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“…This variability represents the ultimate matching of the resistors. The active layer indeed undergoes a level of stress imposed by the STI oxide [9,10] that might be responsible for this scattering. To evaluate the standard deviation of the resistors, equation (1) can be written taking into account the resistor mismatches:…”

Section: Discussionmentioning

confidence: 99%

Embedded Mechanical Stress Sensors for Advanced Process Control

Kasbari¹,

Delamare²,

Blayac³

et al. 2007

2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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Publication suite au congrès : Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMIInternational audienceFor state of the art microelectronic technologies, reliability is a major challenge. Mechanical stress induced by the process steps is often at the origin of yield losses. Degradations of electronic devices are usually correlated to the presence of defects such as dislocations, cracks or delaminations. Usual methods for mechanical stress measurement generally require off-line measurements and are not compatible with fast correction of process parameters. We propose here embedded stress microsensors to allow fast monitoring of mechanical stress and enable real time correction of the process parameters. The test vehicle presented here is dedicated to polysilicon stress monitoring. Its feasibility, sensitivity and relevance in an advanced process control objective are particularly investigated

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“…В приложении SProcess TCAD SenTaurus форма термического окисла и геометрический вид межфаз-ной границы Si/SiO 2 определяются из решения крае-вой задачи для системы механических уравнений Ла-ме, которая описывает движение растущего окисла в терминах поля его перемещений [6]. При этом, для задания параметров краевого условия на межфазной границе решается другая краевая задача, в которой вычисляется концентрация окислителя в процессе его диффузии через окисел к границе.…”

Section: модель термического окисленияunclassified

Modeling of the effect of silicon needles sharpening during their thermal oxidation

Kalinin

Egorkin

2012

2012 IEEE 11th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)

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The thermal oxidation model developed using SProcess TCAD SenTaurus is considered. The cone-shaped silicon needle is used as a test structure. Simulation results show that the proposed model describes the phenomenon of the needle sharpening during their thermal oxidation in accordance with the experimental data. It is shown that for adequate modeling the consideration of some nonlinear mechanical effects is required.

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Modeling the impact of stress on silicon processes and devices

Cited by 46 publications

References 9 publications

Exploring the limits of stress-enhanced hole mobility

Exploring the limits of stress-enhanced hole mobility

Embedded Mechanical Stress Sensors for Advanced Process Control

Modeling of the effect of silicon needles sharpening during their thermal oxidation

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