Modeling the I‐V characteristics of the power microwave FETs with the Angelov model using pulse measurements

Loo‐Yau, J. R.; Reynoso-Hernández, J.A.; Zuniga, Juan; Hirata-Flores, F. I.; Ascencio-Ramirez, H.

doi:10.1002/mop.21596

Cited by 14 publications

(5 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The drain current equation for these models is typically based on the Curtice formulation, which has the form [6,14] I ds ðV gs ; V ds Þ ¼ fðV gs Þ Â gðV ds Þ Â tanhðV ds Þ; ð1Þ…”

Section: Comparison Of Models For Iii-v Fetsmentioning

confidence: 99%

A hybrid model of III-V FETs with accurate high-order derivatives

Zhang

Zhu

et al. 2017

IEICE Electron. Express

View full text Add to dashboard Cite

In this article, a hybrid model for the current-voltage (I-V) characteristic and its high-order derivatives of III-V FETs is presented. The proposed model divides the entire operating region into several subregions and chooses optimum models in each subregion. The artificial neural network (ANN) techniques are employed to smoothly link the boundaries. The validity of this model has been verified by comparing the measurement and modeled results of a GaAs pHEMT.

show abstract

Section: Comparison Of Models For Iii-v Fetsmentioning

confidence: 99%

A hybrid model of III-V FETs with accurate high-order derivatives

Zhang

Zhu

et al. 2017

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

“…While the initial values for coefficients P n , are computed according to the procedure reported in Ref. . a i , b i and c i are extracted at a fixed V GS using the curve fitting toolbox (cftool) from MATLAB; in our experience we found that with j = 8 it is enough to model the I‐V characteristics from the linear to the breakdown region.…”

Section: Proposed Nonlinear Modelmentioning

confidence: 99%

An empirical nonlinear RF model for CMOS fet suitable for modeling the breakdown region

Hernández‐Díaz¹,

Saavedra-Gomez²,

Loo‐Yau³

et al. 2017

Micro & Optical Tech Letters

View full text Add to dashboard Cite

This paper deals with modeling of drain current IDS(VGS,VDS) and intrinsic nonlinear capacitances Cgs(VGS,VDS) and Cgd(VGS,VDS) of the CMOS FET by means of empirical analytical expressions. The proposed models are based on exponential series allowing modeling of the CMOS FET from the linear to the breakdown region. Several High Voltage CMOS (HVMOS) FETs were used to validate the proposed models under pulsed DC, small and large signals. The high correlation between simulated and measured data supports the capability of the proposed empirical model to predict the electrical behavior of the CMOS FET. © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:563–567, 2017

show abstract

“…The Angelov model has also developed for comparison, which is conducted using the Keysight Advanced Design System simulator. The initial values of parameters in Angelov model are selected according to , and more information on parameter extraction may be found in .…”

Section: Model Verificationmentioning

confidence: 99%

“…According to the flowchart in Figure 2, the training and test processes are completed by using software NEUROMODELER [22]. The Angelov model has also developed for [23,24], and more information on parameter extraction may be found in [25].…”

Section: Model Verificationmentioning

confidence: 99%

Accurate modeling of pHEMT output current derivatives over a wide temperature range

Zhu

et al. 2016

Int J Numerical Modelling

View full text Add to dashboard Cite

In this paper, the bias‐dependent current–voltage (I–V) characteristics and their high‐order derivatives of GaAs pseudomorphic high electron mobility transistors (pHEMTs) have been modeled over a wide temperature range. To simulate these characteristics at different temperatures, the model is developed considering the dependence on the ambient temperature. It is the first time that the temperature‐dependent high‐order derivatives of I–V characteristics of pHEMT are predicted, which can guarantee their accuracy under different bias conditions. The artificial neural networks are employed with the temperature as one of the input variables. The validity of this model has been demonstrated by comparing the measured and modeled Ids and its derivatives (gm, gm2 and gm3, derived from the I–V characteristics numerically) of a GaAs pHEMT at different temperature range (250–400 K, with step of 50 K). The results show that the proposed model has a better agreement of high‐order derivatives than the popularly used Angelov model, especially for the third‐order derivative. Copyright © 2016 John Wiley & Sons, Ltd.

show abstract

Modeling the I‐V characteristics of the power microwave FETs with the Angelov model using pulse measurements

Cited by 14 publications

References 11 publications

A hybrid model of III-V FETs with accurate high-order derivatives

A hybrid model of III-V FETs with accurate high-order derivatives

An empirical nonlinear RF model for CMOS fet suitable for modeling the breakdown region

Accurate modeling of pHEMT output current derivatives over a wide temperature range

Contact Info

Product

Resources

About