Modeling the electrode geometry of co-planar capacitors for the microwave dielectric characterization of ceramic thin films

Veber, Asja; Fabijan, David; Kunej, Špela

doi:10.1063/1.4846761

Cited by 1 publication

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“…Finally, Kunej et al tackled the microwave dielectric properties of sol–gel 0.7NBT–0.3NaTaO 3 layers , and reported a dielectric permittivity of 130, measured at 15 GHz with a split resonator configuration. Veber et al worked also on modeling the influence of the co‐planar electrode geometry (varying the configuration (number of fingers, fingers spacing) of interdigital co‐planar capacitors) on the microwave dielectric properties (evaluated using resonant and reflection type measurements) of NBT–NaTaO 3 sol–gel thin films .…”

Section: Introductionmentioning

confidence: 99%

Microwave dielectric properties of pure and Mn-doped lead-free Na_0.5Bi_0.5TiO₃epitaxial thin films grown on (001) LaAlO₃single crystals using pulsed laser deposition

Jean

Huitema

Ghalem

et al. 2016

Phys. Status Solidi A

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(001)‐epitaxial thin films of pure and Mn‐doped lead‐free Na0.5Bi0.5TiO3 (NBT) were grown on (00l) LaAlO3 single crystals, by pulsed laser deposition. The determination of the microwave dielectric permittivity, from interdigitated capacitance values treated using the combination of two previously developed analytical models, constitutes the backbone of this work. In the 3–5 GHz frequency range, constant ϵr values of ∼485 and ∼515 for the pure and Mn‐doped layers, respectively, were extracted and found in good agreement with literature data for pure NBT bulk ceramics, thus underlining the relevance of the approach. These permittivity values were re‐injected in a second step into an electromagnetic simulation of the equivalent electrical circuit. Smith charts revealed the good matching between experimental and simulated data, proving that the employed method appears meaningful. Mn doping seems to lead to a small permittivity increase and clearly to a moderate reduction of the dielectric losses in the 3–5 GHz interval. Finally, the variation of the capacitance versus temperature testifies to the ferroelectric nature of the samples.

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Section: Introductionmentioning

confidence: 99%

Microwave dielectric properties of pure and Mn-doped lead-free Na_0.5Bi_0.5TiO₃epitaxial thin films grown on (001) LaAlO₃single crystals using pulsed laser deposition

Jean

Huitema

Ghalem

et al. 2016

Phys. Status Solidi A

View full text Add to dashboard Cite

show abstract

Modeling the electrode geometry of co-planar capacitors for the microwave dielectric characterization of ceramic thin films

Cited by 1 publication

References 10 publications

Microwave dielectric properties of pure and Mn-doped lead-free Na_0.5Bi_0.5TiO₃epitaxial thin films grown on (001) LaAlO₃single crystals using pulsed laser deposition

Microwave dielectric properties of pure and Mn-doped lead-free Na_0.5Bi_0.5TiO₃epitaxial thin films grown on (001) LaAlO₃single crystals using pulsed laser deposition

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Modeling the electrode geometry of co-planar capacitors for the microwave dielectric characterization of ceramic thin films

Cited by 1 publication

References 10 publications

Microwave dielectric properties of pure and Mn-doped lead-free Na0.5Bi0.5TiO3epitaxial thin films grown on (001) LaAlO3single crystals using pulsed laser deposition

Microwave dielectric properties of pure and Mn-doped lead-free Na0.5Bi0.5TiO3epitaxial thin films grown on (001) LaAlO3single crystals using pulsed laser deposition

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Microwave dielectric properties of pure and Mn-doped lead-free Na_0.5Bi_0.5TiO₃epitaxial thin films grown on (001) LaAlO₃single crystals using pulsed laser deposition

Microwave dielectric properties of pure and Mn-doped lead-free Na_0.5Bi_0.5TiO₃epitaxial thin films grown on (001) LaAlO₃single crystals using pulsed laser deposition