Modeling the conductivity around the dimensionality-controlled metal-insulator transition in LaNiO3/LaAlO3 (100) superlattices

Wei, Haoming; Jenderka, Marcus; Bonholzer, Michael; Grundmann, Marius; Lorenz, Michael

doi:10.1063/1.4907011

Cited by 17 publications

(20 citation statements)

References 31 publications

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“…The resistivity data are first analysed using the Mott-VRH model which can describe the transport of LNO thin films and (100)-oriented SLs well. 4,19 However, the fitting quality is really poor for (111)-oriented SLs on LAO in the high temperature range (not shown). Instead, an activated transport model fits the data in the temperature range from 110 K to 300 K. 21 The characteristic relation is: r / exp(ÀE g /2k B T), where E g denotes the band gap.…”

Section: -mentioning

confidence: 99%

“…The criterion R hop /a > 1 is not fulfilled for [6/7] 10 SL on LAO which undergoes a metal-insulator transition with the sheet resistance around 25.8 kX/(. 19 In addition, a comparison of sheet conductance of [4/7] 10 SL on LAO as a function of T À1/3 and 1000/T is shown in Fig. S2 in the supplementary material.…”

Section: -mentioning

confidence: 99%

“…Obviously, the metal-insulator translation is related to quantum confinement when lowering the dimensionality of the LNO layers in the SLs which has been discussed previously for the (100) orientation. 19 The [7/6] 10 and [7/4] 10 SLs on STO are highly insulating hinting to a possible Mott behavior as shown in Fig. 3(b).…”

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confidence: 99%

“…17 The lattice distortion and octahedral rotation of epitaxially strained SLs on (La,Sr)AlO 4 (100) were studied by Kinyanjui et al 18 More recently, we reported a dimensionality-controlled metalinsulator transition in (100) LNO/LAO SLs and the corresponding conductivity mechanisms were discussed by means of appropriate modeling. 19 In contrast, very little experimental effort has been directed to (111)-oriented substrates due to the highly polar atomic layers along the [111] direction. These polar planes have a significant effect on the growth and may lead to a surface reconstruction.…”

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confidence: 99%

“…Motivated by the above mentioned, promising theoretical predictions, 11,12 together with recent experimental progress in epitaxial growth of LNO-based films and SLs, 19,22 we present here (111) [LNO m /LAO n ] l SLs (m and n indicate the number of unit cells, respectively, thereafter referred to as [m/n] l ). The stacking periodicity is repeated l times to adjust the total superlattice thickness.…”

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confidence: 99%

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Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO3/LaAlO3 (111) superlattices

Wei

Grundmann

Lorenz

2016

Applied Physics Letters

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Recently, topological conductivity has been predicted theoretically in LaNiO3(111)-based superlattices. Here we report high-quality epitaxial LaNiO3/LaAlO3 superlattices on (111)-oriented SrTiO3 and LaAlO3 single crystals. For both substrates a metal-insulator transition with decreasing number of LaNiO3 monolayers is found. While the electrical transport is dominated by two-dimensional variable range hopping for superlattices grown on polar mismatched SrTiO3(111), it switches to a thermally activated single gap behavior on polar matched LaAlO3(111). The gap energy of the polar double-layer LaNiO3 superlattices can be tuned via the thickness of the insulating LaAlO3 layers.

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confidence: 99%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO3/LaAlO3 (111) superlattices

Wei

Grundmann

Lorenz

2016

Applied Physics Letters

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Strain‐Engineered Metal‐to‐Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon

et al. 2020

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LaNiO₃ films with tunable out-of-plane lattice parameter and their strain-related electrical properties

Wei

Jenderka

Grundmann

et al. 2015

Phys. Status Solidi A

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97 39286LaNiO 3 (LNO) thin films were grown using pulsed laser deposition. The c-axis, i.e., out-of-plane lattice parameter of the films was controlled reproducibly by using different substrate materials and by variation of oxygen partial pressure and growth temperature. The out-of-plane (c-axis) strain of LNO deposited on LaAlO 3 with increasing oxygen pressure changed from positive to negative. All the films show an excellent metallic conductivity with positive resistivity temperature coefficient. Lowest resistivity was about 300 mV cm. At high and low temperatures, the resistivity is explained by electron-phonon scattering and electron-electron interaction, respectively. In addition, the resistivity shows a clear dependence on the c-axis strain of LNO films. With increasing strain, the resistivity increases. However, this effect is much more pronounced for negative c-axis strain.Strain-dependent resistivity of LNO films on LAO at the indicated measurement temperatures. The inset is a typical AFM image of the LNO film surface.1 Introduction The conduction band of perovskite nickelates (RNiO 3 , where R ¼ rare earth) is formed by the overlap of the Ni 3d orbitals and the O 2p orbitals. Most perovskite nickelates exhibit a temperature-driven metal-toinsulator transition [1,2], which is related to the strongly distorted perovskite structure and the size of the rare-earth ion R [3, 4]. However, LaNiO 3 (LNO) is the only member that remains metallic down to the lowest temperatures [5]. For this reason, LNO is an excellent candidate for use as an electrode in oxide electronics, in particular at low temperature. The primitive cell of bulk LNO is rhombohedral with angle a ¼ 60.498. It is reasonably well approximated by a pseudocubic cell with a ¼ 0.3838 nm. Several efforts have been undertaken to prepare LNO thin films by sputtering [6], pulsed laser deposition (PLD) [7], molecular beam

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Modeling the conductivity around the dimensionality-controlled metal-insulator transition in LaNiO3/LaAlO3 (100) superlattices

Cited by 17 publications

References 31 publications

Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO3/LaAlO3 (111) superlattices

Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO3/LaAlO3 (111) superlattices

Strain‐Engineered Metal‐to‐Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon

LaNiO₃ films with tunable out-of-plane lattice parameter and their strain-related electrical properties

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Modeling the conductivity around the dimensionality-controlled metal-insulator transition in LaNiO3/LaAlO3 (100) superlattices

Cited by 17 publications

References 31 publications

Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO3/LaAlO3 (111) superlattices

Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO3/LaAlO3 (111) superlattices

Strain‐Engineered Metal‐to‐Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon

LaNiO3 films with tunable out-of-plane lattice parameter and their strain-related electrical properties

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LaNiO₃ films with tunable out-of-plane lattice parameter and their strain-related electrical properties