Strain‐Engineered Metal‐to‐Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon

Chen, Binbin; Gauquelin, Nicolas; Jannis, Daen; Cunha, Daniel M.; Halisdemir, Ufuk; Lee, Jun Young; Belhadi, Jamal; Eltes, Felix; Abel, Stefan; Jovanović, Zoran; Spreitzer, Matjaž; Fompeyrine, J.; Verbeeck, Johan; Bibès, Manuel; Huijben, Mark; Rijnders, Guus; Koster, Gertjan

doi:10.1002/adma.202004995

Cited by 27 publications

(22 citation statements)

References 47 publications

(71 reference statements)

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“…The presence of Mn 2+ at the LMO/STO interface (Figure 2B) is due to electron accumulation driven by the polar discontinuity [28,29,38]. In contrast, no electronic reconstructions are observed at the LFO/STO interface because of the stable 3d 5 electronic configuration of Fe 3+ [39]. Instead, Nakamura et al showed that the polar charges were screened by an emergent spontaneous polarization at the LFO/STO heterointerface [40].…”

Section: Resultsmentioning

confidence: 98%

Asymmetric Interfacial Intermixing Associated Magnetic Coupling in LaMnO3/LaFeO3 Heterostructures

et al. 2021

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The structural and magnetic properties of LaMnO3/LaFeO3 (LMO/LFO) heterostructures are characterized using a combination of scanning transmission electron microscopy, electron energy-loss spectroscopy, bulk magnetometry, and resonant x-ray reflectivity. Unlike the relatively abrupt interface when LMO is deposited on top of LFO, the interface with reversed growth order shows significant cation intermixing of Mn3+ and Fe3+, spreading ∼8 unit cells across the interface. The asymmetric interfacial chemical profiles result in distinct magnetic properties. The bilayer with abrupt interface shows a single magnetic hysteresis loop with strongly enhanced coercivity, as compared to the LMO plain film. However, the bilayer with intermixed interface shows a step-like hysteresis loop, associated with the separate switching of the “clean” and intermixed LMO sublayers. Our study illustrates the key role of interfacial chemical profile in determining the functional properties of oxide heterostructures.

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Section: Resultsmentioning

confidence: 98%

Asymmetric Interfacial Intermixing Associated Magnetic Coupling in LaMnO3/LaFeO3 Heterostructures

et al. 2021

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“…6. The broad feature is caused by the in-plane mosaic spread of the SLs, which is generally present in oxide films grown on silicon 31,[35][36][37] . As n increases, the reflection shifts to smaller in-plane Q value, corresponding to an expanded in-plane lattice spacing.…”

Section: Resultsmentioning

confidence: 99%

“…This strain is caused by the difference in thermal expansion coefficients between silicon (~2.6 × 10 −6 K −1 ) and oxides (~8.7 × 10 −6 K −1 for STO and ~11.2 × 10 −6 K −1 for LMO) 31 , 35 . At the growth temperature, the SLs are fully relaxed from silicon and a is mostly determined by the relative thickness ratio among the constituent layers 37 . As the samples cool down to room temperature, a is constrained by the additional thermal tension from silicon 31 , 35 , 36 .…”

Section: Resultsmentioning

confidence: 99%

Signatures of enhanced out-of-plane polarization in asymmetric BaTiO3 superlattices integrated on silicon

et al. 2022

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In order to bring the diverse functionalities of transition metal oxides into modern electronics, it is imperative to integrate oxide films with controllable properties onto the silicon platform. Here, we present asymmetric LaMnO3/BaTiO3/SrTiO3 superlattices fabricated on silicon with layer thickness control at the unit-cell level. By harnessing the coherent strain between the constituent layers, we overcome the biaxial thermal tension from silicon and stabilize c-axis oriented BaTiO3 layers with substantially enhanced tetragonality, as revealed by atomically resolved scanning transmission electron microscopy. Optical second harmonic generation measurements signify a predominant out-of-plane polarized state with strongly enhanced net polarization in the tricolor superlattices, as compared to the BaTiO3 single film and conventional BaTiO3/SrTiO3 superlattice grown on silicon. Meanwhile, this coherent strain in turn suppresses the magnetism of LaMnO3 as the thickness of BaTiO3 increases. Our study raises the prospect of designing artificial oxide superlattices on silicon with tailored functionalities.

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“…[4,37] Following this line of possible connection, the antiferromagnetic exchange interaction may be pivotal for the superconductivity in the NSNO thin films. Although the exact origin of the antiferromagnetism in superconducting NSNO thin films needs more studies, for example, our preliminary calculations that the surface of NSNO films could help stabilize the antiferromagnetic order (see Note S2, Supporting Information), or interface-induced electronic reconstruction [38][39][40][41] could occur at the interface between STO substrates [35,42] and NSNO thin films similar to the LaMnO 3 /STO [43,44] and LaAlO 3 /STO interfaces, [42,45,46] we believe that the experimental observation of the antiferromagnetic order superconducting NSNO thin films itself is fundamentally crucial so that this work may steer the center of focus for the rapidly developing field on the novel superconductivity in nickelates. In addition to the great interest in the community of condensed matter physics, the successful synthesis of this new type of Ni-based superconductors may pave the way to other important novel material applications such as energy, electromagnetic and spintronic materials and devices.…”

Section: Resultsmentioning

confidence: 99%

Antiferromagnetism in Ni‐Based Superconductors

Zhou

Zhang

et al. 2021

Advanced Materials

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Due to the lack of any magnetic order down to 1.7 K in the parent bulk compound NdNiO2, the recently discovered 9–15 K superconductivity in the infinite‐layer Nd0.8Sr0.2NiO2 thin films has provided an exciting playground for unearthing new superconductivity mechanisms. Herein, the successful synthesis of a series of superconducting Nd0.8Sr0.2NiO2 thin films ranging from 8 to 40 nm is reported. The large exchange bias effect is observed between the superconducting Nd0.8Sr0.2NiO2 films and a thin ferromagnetic layer, which suggests the existence of the antiferromagnetic order. Furthermore, the existence of the antiferromagnetic order is evidenced by X‐ray magnetic linear dichroism measurements. These experimental results are fundamentally critical for the current field.

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Strain‐Engineered Metal‐to‐Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon

Abstract: X-Ant-Em instrument operated at 300 kV. The temperature dependent resistivities were measured with a van der Pauw geometry on a Quantum Design physical property measurement system. The XAS experiments were performed on the XTreme beamline at Swiss Light Source. [45]

Cited by 27 publications

References 47 publications

Asymmetric Interfacial Intermixing Associated Magnetic Coupling in LaMnO3/LaFeO3 Heterostructures

Asymmetric Interfacial Intermixing Associated Magnetic Coupling in LaMnO3/LaFeO3 Heterostructures

Signatures of enhanced out-of-plane polarization in asymmetric BaTiO3 superlattices integrated on silicon

Antiferromagnetism in Ni‐Based Superconductors

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