2018 IEEE International Conference on Microelectronic Test Structures (ICMTS) 2018
DOI: 10.1109/icmts.2018.8383757
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Modeling split-gate flash memory cell for advanced neuromorphic computing

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Cited by 5 publications
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“…In addition to storage, memristors with multiple analog states are capable of actively processing information, via the so called in-memory computing scheme. In-memory or nearmemory computing with SRAM, DRAM, or flash memory [9,10] provides a highly parallel alternative to resolve the 'memory wall' of the von-Neumann architecture [11] that the data processing and the data storage are separated. This separation results in low efficiency for data-centric tasks due to the high cost of time and energy in data transferring between the memory and the processing units.…”
Section: The Memristormentioning
confidence: 99%
“…In addition to storage, memristors with multiple analog states are capable of actively processing information, via the so called in-memory computing scheme. In-memory or nearmemory computing with SRAM, DRAM, or flash memory [9,10] provides a highly parallel alternative to resolve the 'memory wall' of the von-Neumann architecture [11] that the data processing and the data storage are separated. This separation results in low efficiency for data-centric tasks due to the high cost of time and energy in data transferring between the memory and the processing units.…”
Section: The Memristormentioning
confidence: 99%
“…Analogue memory-based DNN accelerators are being widely developed in academia and industry using a variety of memories 5 , including resistive RAM (ReRAM) 6,7 , conductive-bridging RAM (CBRAM) 8 , NOR flash [9][10][11][12] , magnetic RAM (MRAM), and phase-change memory (PCM) 13,14 .…”
mentioning
confidence: 99%