Modeling of waveguide PIN photodetectors under very high optical power

Harari, J.; Journet, F.; Rabii, O.; Jin, Guanghai; Vilcot, Jean-Pierre; Decoster, D.

doi:10.1109/22.414582

Cited by 26 publications

(7 citation statements)

References 20 publications

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“…It was confirmed that there was no saturation with a dc current of up to about 4 mA. Numerical investigations on the WGPD were also reported [53], and they indicated that the saturation current is limited by the higher photocurrent near the input end due to exponential photoabsorption decay.…”

Section: B Structure Design Challengesmentioning

confidence: 65%

Ultrawide-band/high-frequency photodetectors

Kato

1999

IEEE Trans. Microwave Theory Techn.

313

127

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The two main trends in the progress of ultrawideband/high-frequency photodetectors (PD's), improving the bandwidth-efficiency product and obtaining a high saturation current, are reviewed. With respect to achieving large bandwidthefficiency, the limiting factors and potentials of edge-coupled (waveguide, waveguide-fed, traveling-wave, periodic-travelingwave), resonant-cavity, and refracting-facet photodiodes, as well as the avalanche photodiode are discussed. Regarding high-saturation current, the author estimated how much the space-charge effect limits the saturation current and two ways to reduce the space-charge effect are outlined. One way is to distribute the photocarriers along the edge-coupled PD's and the other is to increase the carrier velocity using a uni-traveling carrier structure. The waveguide-photodiode-based technologies that we have developed are also presented; namely the design and fabrication of a 100-GHz waveguide photodiode (WGPD), uni-traveling carrier WGPD, 60-GHz packaging, and a 20-GHz large-core WGPD for the planar lightwave circuit integration. A 50-Gb/s receiver opto-electronic integrated circuit technology based on the WGPD is also presented.

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Section: B Structure Design Challengesmentioning

confidence: 65%

Ultrawide-band/high-frequency photodetectors

Kato

1999

IEEE Trans. Microwave Theory Techn.

313

127

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“…AND WAVEGUIDE PHOTODIODES Considerable effort has been focused in recent years toward the design of waveguide and traveling-wave PD's [14]- [17], [36]. At first glance it seems obvious that traveling-wave PD's should provide the highest current as the carrier and heat densities can be minimized since the bandwidth is not limited by capacitance, allowing larger surface areas to be exploited.…”

Section: Comparisons Between Surface-illuminatedmentioning

confidence: 99%

“…The low total thermal impedance, resulting from long thin effective heat sources, can increase substantially if thick layers such as InGaAsP [15], [36], which has an even lower thermal conductivity [32] than InGaAs, are used to help dilute the light absorption and guide the light in the waveguide. These layers can be substantially thicker than the InGaAs absorber itself, and thus can completely eliminate the advantage of long, thin heat sources that waveguide PD's have over surfaceilluminated PD's.…”

Section: Comparisons Between Surface-illuminatedmentioning

confidence: 99%

Design considerations for high-current photodetectors

Williams

Esman

1999

J. Lightwave Technol.

179

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Abstract-This paper outlines the design considerations for gigahertz-bandwidth, high-current p-i-n photodiodes utilizing InGaAs absorbers. The factors being investigated are photodetector intrinsic region length, intrinsic region doping density, temperature effects, illumination spot size, illumination wavelength, frequency, and illumination direction. Space-charge calculations are used to determine optimal device geometry and conditions which maximize saturation photocurrent. A thermal model is developed to study the effects of temperature on high-current photodetector performance. The thermal and space-charge model results are combined to emphasize the importance of thin intrinsic region lengths to obtain high current. Finally, a comparison between surface-illuminated p-i-n structures and waveguide structures is made to differentiate between the problems associated with achieving high current in each structure and to outline techniques to achieve maximum performance.

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“…Because the size of the device is small, the power is obviously limited. Under high optical injection, two effects occur to limit the microwave power 9 . Due to increasing photocarrier density, the electric field in the intrinsic region vanishes close to the I / N+ interface and increases at the P+ / I interface.…”

Section: Pin Waveguide Photodetectormentioning

confidence: 99%