Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Ilik, Sadik; Kabaoglu, Aykut; Solmaz, Nergiz Şahin; Yelten, Mustafa Berke

doi:10.1109/ted.2019.2926931

Cited by 15 publications

(1 citation statement)

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“…The space radiation environment especially at Low Earth Orbit is populated with a trapped particle at Van Allen Belts, galactic cosmic ray, and other radiation from the sun. Among those particles are protons and electrons radiation, which may cause total ionizing dose (TID), displacement damage (DD), single event effect (SEE) and others, imposing the space mission in LEO at risk [35]. The electron radiation at LEO is estimated to be ranged from 100 Kev -1 Mev [28].…”

Section: B Irradiation Process and Measurement Experimental Setupmentioning

confidence: 99%

The Radiation Effect on Low Noise Amplifier Implemented in the Space-Aerial–Terrestrial Integrated 5G Networks

2021

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This paper provides the details of a study on the effects of electron irradiation on two Low Noise Amplifiers (LNA), the Gallium-Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) based and the Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)-based. Previous studies have shown that the properties of GaAs and SiGe HBT's are very tolerant of gamma, neutron, and proton irradiation without additional radiation hardening. Nowadays, commercials on the shelves (COTS) LNAs have been used in CubeSat space communication systems which may be connected to other communication networks for the implementation of the space-aerial-terrestrial integrated 5G network (SATIN) systems projects, for satellites, launched into Low and Medium Earth Orbits. Previous studies suggest that the electron radiation in space may degrade the LNAs' performance and might even lead to its failure. Located at the front end of the communication receiver system, this paper conducted such investigation to evaluate the performance under the radiation of the GaAs and SiGe LNAs considering the physics of the technology of each LNA, respectively. The results indicate that both SiGe and GaAs technologies are affected after electron irradiation. As a result, this degradation of the LNAs' performance affected the communications system performance of the inter-satellite radio link. After the assessment of the quality performance of the communication link at the system level, it has been found that the inter-satellite space link will be at risk under high space radiation dose and the link BER degrades proportionally to the radiation dose level. INDEX TERMS Degradation, electron irradiation, gallium arsenide, inter-satellite link, low noise amplifier, silicon germanium, 5G. I. INTRODUCTION To improve performance and reduce the cost of the communication systems, academia and industry are active in the discovery of adequate solutions. With the introduction of the fifth-generation (5G), users are expecting reliable broadband services everywhere at a reasonable cost. However, the terrestrial network alone may not able to achieve quality service availability at any time and place, especially in a harsh environment such as oceans and mountains [1]. Therefore, the proposition comes to develop a non-terrestrial integrated 5G system [2]. Both satellite industry and communication start to work on this new paradigm to integrate the space, aerial and terrestrial networks to form the three-dimensional of 5G [3], [4]. Some infrastructures already existed in this new move, such as the iridium with its 66 active satellites constellation in providing voice and low data service for cellular phones [5]. In recent years, some space missions have been launched as well such as the Global Express to provide more advanced communications services with high throughput satellites (HTS) [6]. The GEO system has been the most popular approach in terms of providing commercial satellite communication services, however, the propagation delay, attenuation, and ...

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Section: B Irradiation Process and Measurement Experimental Setupmentioning

confidence: 99%