The Radiation Effect on Low Noise Amplifier Implemented in the Space-Aerial–Terrestrial Integrated 5G Networks

Abstract

This paper provides the details of a study on the effects of electron irradiation on two Low Noise Amplifiers (LNA), the Gallium-Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) based and the Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)-based. Previous studies have shown that the properties of GaAs and SiGe HBT's are very tolerant of gamma, neutron, and proton irradiation without additional radiation hardening. Nowadays, commercials on the shelves (COTS) LNAs have been used in CubeSat space communication systems which may be connected to other communication networks for the implementation of the space-aerial-terrestrial integrated 5G network (SATIN) systems projects, for satellites, launched into Low and Medium Earth Orbits. Previous studies suggest that the electron radiation in space may degrade the LNAs' performance and might even lead to its failure. Located at the front end of the communication receiver system, this paper conducted such investigation to evaluate the performance under the radiation of the GaAs and SiGe LNAs considering the physics of the technology of each LNA, respectively. The results indicate that both SiGe and GaAs technologies are affected after electron irradiation. As a result, this degradation of the LNAs' performance affected the communications system performance of the inter-satellite radio link. After the assessment of the quality performance of the communication link at the system level, it has been found that the inter-satellite space link will be at risk under high space radiation dose and the link BER degrades proportionally to the radiation dose level. INDEX TERMS Degradation, electron irradiation, gallium arsenide, inter-satellite link, low noise amplifier, silicon germanium, 5G. I. INTRODUCTION To improve performance and reduce the cost of the communication systems, academia and industry are active in the discovery of adequate solutions. With the introduction of the fifth-generation (5G), users are expecting reliable broadband services everywhere at a reasonable cost. However, the terrestrial network alone may not able to achieve quality service availability at any time and place, especially in a harsh environment such as oceans and mountains [1]. Therefore, the proposition comes to develop a non-terrestrial integrated 5G system [2]. Both satellite industry and communication start to work on this new paradigm to integrate the space, aerial and terrestrial networks to form the three-dimensional of 5G [3], [4]. Some infrastructures already existed in this new move, such as the iridium with its 66 active satellites constellation in providing voice and low data service for cellular phones [5]. In recent years, some space missions have been launched as well such as the Global Express to provide more advanced communications services with high throughput satellites (HTS) [6]. The GEO system has been the most popular approach in terms of providing commercial satellite communication services, however, the propagation delay, attenuation, and ...

COTS Devices for Space Missions in LEO

“…A NewSpace application of commercial BJTs involves their use as Low-Noise Amplifiers (LNAs) in the implementation of space-aerialterrestrial integrated 5G networks. Since LNAs are positioned at the front end of receiver systems, evaluating their radiation tolerance levels is crucial to ensure reliable RF links [113].…”

Interplay Between γ–Ray Irradiation and 3DEG for Dosimeter Applications

“…A close observation into the cases compiled in Table I calls for a principal requirement for detecting ionizing radiations at a low and high dose to avoid the system failure due to a drift in the operating conditions [33][34][35]. There have been attempts made to utilize GaN HEMTs as a comparator to detect ionizing radiations [36], thin film GaN HEMTs for the detection of X -Rays [37], ultrahigh gain AlGaN/GaN HEMTs for the detection of X -Rays and Protons [38] [39], or an attempt to utilize intrinsic properties of GaN to realize Schottky diodes for the detection of α -Particles [40].…”